18499934. LOCAL DIGIT LINE (LDL) COUPLING CANCELLATION simplified abstract (Micron Technology, Inc.)
LOCAL DIGIT LINE (LDL) COUPLING CANCELLATION
Organization Name
Inventor(s)
Richard E. Fackenthal of Carmichael CA (US)
Christopher K. Morzano of Boise ID (US)
Daniele Vimercati of El Dorado Hills CA (US)
LOCAL DIGIT LINE (LDL) COUPLING CANCELLATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18499934 titled 'LOCAL DIGIT LINE (LDL) COUPLING CANCELLATION
The patent application describes devices and methods for operating a memory device with multiple memory cells and global digit lines for data storage and access.
- The memory device includes local digit lines to transfer data between global digit lines and memory cells.
- Multiple digit line selection circuits are used to connect selected local digit lines to global digit lines.
- A controller is employed to choose a pattern of selected digit line selection circuits to reduce capacitive coupling between local digit lines.
Potential Applications: - This technology can be applied in various memory devices such as DRAMs, SRAMs, and flash memory. - It can enhance the performance and efficiency of memory systems in computers, smartphones, and other electronic devices.
Problems Solved: - Helps in reducing capacitive coupling between digit lines, improving data integrity and reliability. - Enhances the speed and efficiency of memory access operations.
Benefits: - Improved data storage and access efficiency. - Enhanced reliability and performance of memory devices. - Reduction in power consumption and heat generation.
Commercial Applications: - This innovation can be utilized in the semiconductor industry for manufacturing advanced memory devices. - It can benefit companies involved in the production of electronic devices by improving memory performance.
Questions about the Technology: 1. How does the technology of reducing capacitive coupling between local digit lines improve memory device performance? 2. What are the potential challenges in implementing this technology in mass-produced memory devices?
Frequently Updated Research: - Stay updated on advancements in memory device technology, particularly in the area of reducing capacitive coupling for improved performance and reliability.
Original Abstract Submitted
Devices and methods for operating a memory device including multiple memory cells configured to store data and multiple global digit lines configured to carry the data in memory accesses of the memory cells. The memory device also includes multiple local digit lines configured to carry the data between the global digit lines and the memory cells. The memory device further includes multiple digit line selection circuits configured to selectively couple selected local digit lines of the local digit lines to the global digit lines. The memory device also includes a controller configured to select a pattern of selected digit line selection circuits to at least partially cancel capacitive coupling between the selected local digit lines.
