Category:Zhenming Zhou of San Jose CA US
Zhenming Zhou
Zhenming Zhou from San Jose CA US has applied for patents in technology areas such as G06F3/06 with micron technology, inc..
Patents
Pages in category "Zhenming Zhou of San Jose CA US"
The following 39 pages are in this category, out of 39 total.
1
- 18774799. DUAL-READ DATA INTEGRITY SCAN IN A MEMORY SUB-SYSTEM (Micron Technology, Inc.)
- 18782517. GANGED READ OPERATION FOR MULTIPLE SUB-BLOCKS (Micron Technology, Inc.)
- 18782536. CONCURRENT READ ERROR HANDLING OPERATIONS (Micron Technology, Inc.)
- 18784434. OPERATIONS ON PARTIALLY PROGRAMMED ERASE BLOCKS (Micron Technology, Inc.)
- 18786016. PERFORMING CORRECTIVE SENSE OPERATIONS IN MEMORY (Micron Technology, Inc.)
- 18786100. PROGRAMMING DATA IN MEMORY (MICRON TECHNOLOGY, INC.)
- 18786301. MULTI-FINE PROGRAM SCHEME FOR RELIABILITY RISK WORD LINES (Micron Technology, Inc.)
- 18968924. CHARGE LOSS MITIGATION THROUGH DYNAMIC PROGRAMMING SEQUENCE (Micron Technology, Inc.)
- 18971520. MEMORY CELL VOLTAGE LEVEL SELECTION (Micron Technology, Inc.)
- 18975937. ADAPTIVE BITLINE VOLTAGE FOR MEMORY OPERATIONS (Micron Technology, Inc.)
- 18979331. READ WINDOW MANAGEMENT IN A MEMORY SYSTEM (Micron Technology, Inc.)
- 18988243. MANAGING THE PROGRAMMING OF AN OPEN TRANSLATION UNIT (MICRON TECHNOLOGY, INC.)
- 18990013. READ LEVEL COMPENSATION FOR PARTIALLY PROGRAMMED BLOCKS OF MEMORY DEVICES (Micron Technology, Inc.)
2
- 20250166696. Management Dynamic (Micron Technology, .)
- 20250166708. Adaptive Sensing Time (Micron Technology, .)
- 20250166709. Independent Sensing Ti (Micron Technology, .)
- 20250181267. Dynamic Read Level Tri (Micron Technology, .)
- 20250190126. Managing Read Commands (Micron Technology, .)
- 20250218528. Read Disturb Charge Lo (Micron Technology, .)
M
- Micron technology, inc. (20240256155). MEMORY READ OPERATION USING A VOLTAGE PATTERN BASED ON A READ COMMAND TYPE
- Micron technology, inc. (20240256444). GENERATING VIRTUAL BLOCKS USING PARTIAL GOOD BLOCKS
- Micron technology, inc. (20250004647). RELIABILITY IMPROVEMENTS USING MEMORY DIE BINNING
- Micron technology, inc. (20250004663). TEMPERATURE-BASED READ DISTURB OPERATIONS
- Micron technology, inc. (20250006269). MANAGING ALLOCATION OF BLOCKS IN A MEMORY SUB-SYSTEM
- Micron technology, inc. (20250006270). MANAGING ALLOCATION OF BLOCKS ACROSS PLANES IN A MEMORY SUB-SYSTEM
- Micron technology, inc. (20250014657). SELECTIVE USE OF A WORD LINE MONITORING PROCEDURE FOR RELIABILITY-RISK WORD LINES
- Micron technology, inc. (20250094063). CHARGE LOSS MITIGATION THROUGH DYNAMIC PROGRAMMING SEQUENCE
- Micron technology, inc. (20250103215). ADAPTIVE BITLINE VOLTAGE FOR MEMORY OPERATIONS
- Micron technology, inc. (20250103412). MULTI-FINE PROGRAM SCHEME FOR RELIABILITY RISK WORD LINES
- Micron technology, inc. (20250104772). MEMORY CELL VOLTAGE LEVEL SELECTION
- Micron technology, inc. (20250104779). GANGED READ OPERATION FOR MULTIPLE SUB-BLOCKS
- Micron technology, inc. (20250104789). DUAL-READ DATA INTEGRITY SCAN IN A MEMORY SUB-SYSTEM
- Micron technology, inc. (20250104796). PERFORMING CORRECTIVE SENSE OPERATIONS IN MEMORY
- Micron technology, inc. (20250110827). CONCURRENT READ ERROR HANDLING OPERATIONS
- Micron technology, inc. (20250111886). READ WINDOW MANAGEMENT IN A MEMORY SYSTEM
- Micron technology, inc. (20250118364). MANAGING THE PROGRAMMING OF AN OPEN TRANSLATION UNIT
- Micron technology, inc. (20250124987). READ LEVEL COMPENSATION FOR PARTIALLY PROGRAMMED BLOCKS OF MEMORY DEVICES
- Micron technology, inc. (20250130731). PROGRAMMING DATA IN MEMORY
- Micron technology, inc. (20250140320). OPERATIONS ON PARTIALLY PROGRAMMED ERASE BLOCKS