MANAGEMENT OF DYNAMIC READ VOLTAGE SEQUENCES IN A MEMORY SUBSYSTEM

Abstract: a memory subsystem receives a first read command and a second read command. responsive to determining that the first read command originated from a host system, the memory subsystem selects a reverse read trim setting. responsive to determining that the second read command did not originate from the host system, the memory subsystem selects a forward read trim setting. the memory subsystem executes the first read command using the reverse read trim setting. the memory subsystem executes the second read command using the forward read trim setting.

Inventor(s): Yu-Chung Lien, Zhenming Zhou

CPC Classification: G11C11/4096 (Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches )

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