READ DISTURB CHARGE LOSS HANDLING

Abstract: methods, systems, and devices for read disturb charge loss handling are described. a memory system may be configured to perform a scan to identify errors from voltage threshold shift, due to performing read operations at high temperatures. the scan may be initiated based on detecting an operating temperature of the memory system and that a memory die of the memory system is unreliable. the memory system may determine a frequency for performing the scan, and perform the scan based on satisfying a threshold associated with the frequency. the scan may include scanning pages associated with word lines to determine whether a quantity of errors satisfies a threshold. after satisfying the threshold, the memory system may fold a block associated with the quantity of errors. in some examples, the pages scanned may be selected based on a priority level defined by a type of memory cells associated with the word lines.

Inventor(s): Murong Lang, Zhongguang Xu, Yu-Chung Lien, Ching-Huang Lu, Zhenming Zhou

CPC Classification: G11C29/46 (STATIC STORES (semiconductor memory devices ))

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