18784434. OPERATIONS ON PARTIALLY PROGRAMMED ERASE BLOCKS (Micron Technology, Inc.)
OPERATIONS ON PARTIALLY PROGRAMMED ERASE BLOCKS
Organization Name
Inventor(s)
Hanping Chen of San Jose CA US
Zhongguang Xu of San Jose CA US
Zhenming Zhou of San Jose CA US
OPERATIONS ON PARTIALLY PROGRAMMED ERASE BLOCKS
This abstract first appeared for US patent application 18784434 titled 'OPERATIONS ON PARTIALLY PROGRAMMED ERASE BLOCKS
Original Abstract Submitted
Apparatuses and methods for performing sensing operations on partially programmed erase blocks are provided. One example apparatus can include a memory array comprising a plurality of erase blocks and a controller coupled to the memory array. The controller can be configured to apply a first sensing voltage to a first access line of a first group of access lines corresponding to the first erase block during a first sensing operation on the first erase block that is partially programmed, apply a first pass voltage to a number of programmed access lines of the first group of access lines corresponding to the first erase block during the first sensing operation, and apply a second pass voltage a number of unprogrammed access lines of the first group of access lines corresponding to the first erase block during the first sensing operation.