Category:Yan Sun of San Diego CA US
Yan Sun
Yan Sun from San Diego CA US has applied for patents in technology areas such as H01L23/48, H01L29/06, H01L29/417 with qualcomm incorporated.
Patents
Pages in category "Yan Sun of San Diego CA US"
The following 27 pages are in this category, out of 27 total.
1
- 18469465. SELF-ALIGNED BACKSIDE INTERCONNECT (QUALCOMM Incorporated)
- 18469473. BACKSIDE BI-DIRECTIONAL INTERCONNECT (QUALCOMM Incorporated)
- 18469483. GATE-TIE-DOWN IN BACKSIDE POWER ARCHITECTURE USING TRENCH-TIE-DOWN SCHEME (QUALCOMM Incorporated)
- 18469489. GATE-TIE-DOWN IN BACKSIDE POWER ARCHITECTURE USING CONTACT JUMPER AND BACKSIDE CONTACT (QUALCOMM Incorporated)
- 18469496. GATE-ALL-AROUND FIELD EFFECT TRANSISTOR STRUCTURES (QUALCOMM Incorporated)
- 18469501. MEMORY CELL STRUCTURES USING FULL BACKSIDE CONNECTIVITY (QUALCOMM Incorporated)
- 18469505. COMPACT LOGIC CELLS USING FULL BACKSIDE CONNECTIVITY (QUALCOMM Incorporated)
- 18470207. COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) CIRCUITS AND METHODS FOR MAKING THE SAME (QUALCOMM Incorporated)
- 18470226. COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) CIRCUITS WITH VERTICAL ROUTING STRUCTURES (QUALCOMM Incorporated)
- 18501836. DIODE STRUCTURE FOR DIRECT BACKSIDE CONTACT, BACKSIDE POWER DELIVERY NETWORK (QUALCOMM Incorporated)
- 18503776. MEMORY CELL STRUCTURES USING BACKSIDE METAL CROSS-COUPLE STRUCTURES (QUALCOMM Incorporated)
- 18503839. COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) CIRCUITS WITH DIRECT VERTICAL CONNECTORS AND METHODS FOR MAKING THE SAME (QUALCOMM Incorporated)
- 18824706. GATE-ALL-AROUND FIELD EFFECT TRANSISTOR STRUCTURES (QUALCOMM Incorporated)
Q
- Qualcomm incorporated (20250096075). MEMORY CELL STRUCTURES USING FULL BACKSIDE CONNECTIVITY
- Qualcomm incorporated (20250096130). GATE-ALL-AROUND FIELD EFFECT TRANSISTOR STRUCTURES
- Qualcomm incorporated (20250098204). GATE-TIE-DOWN IN BACKSIDE POWER ARCHITECTURE USING CONTACT JUMPER AND BACKSIDE CONTACT
- Qualcomm incorporated (20250098217). GATE-ALL-AROUND FIELD EFFECT TRANSISTOR STRUCTURES
- Qualcomm incorporated (20250098220). COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) CIRCUITS AND METHODS FOR MAKING THE SAME
- Qualcomm incorporated (20250098221). COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) CIRCUITS WITH VERTICAL ROUTING STRUCTURES
- Qualcomm incorporated (20250098256). SELF-ALIGNED BACKSIDE INTERCONNECT
- Qualcomm incorporated (20250098267). BACKSIDE BI-DIRECTIONAL INTERCONNECT
- Qualcomm incorporated (20250098301). GATE-TIE-DOWN IN BACKSIDE POWER ARCHITECTURE USING TRENCH-TIE-DOWN SCHEME
- Qualcomm incorporated (20250098302). COMPACT LOGIC CELLS USING FULL BACKSIDE CONNECTIVITY
- Qualcomm incorporated (20250151253). MEMORY CELL STRUCTURES USING BACKSIDE METAL CROSS-COUPLE STRUCTURES
- Qualcomm incorporated (20250151346). DIODE STRUCTURE FOR DIRECT BACKSIDE CONTACT, BACKSIDE POWER DELIVERY NETWORK
- Qualcomm incorporated (20250151386). COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) CIRCUITS WITH DIRECT VERTICAL CONNECTORS AND METHODS FOR MAKING THE SAME