18824706. GATE-ALL-AROUND FIELD EFFECT TRANSISTOR STRUCTURES (QUALCOMM Incorporated)
GATE-ALL-AROUND FIELD EFFECT TRANSISTOR STRUCTURES
Organization Name
Inventor(s)
Shreesh Narasimha of Charlotte NC US
Deepak Sharma of San Diego CA US
GATE-ALL-AROUND FIELD EFFECT TRANSISTOR STRUCTURES
This abstract first appeared for US patent application 18824706 titled 'GATE-ALL-AROUND FIELD EFFECT TRANSISTOR STRUCTURES
Original Abstract Submitted
A field effect transistor (FET) structure and method for making the same is disclosed. In an aspect, a FET structure comprises a gate structure, disposed between a first vertical source/drain (S/D) structure and a second vertical S/D structure, the gate structure comprising a channel structure comprising a plurality of vertically-stacked, horizontal channels connecting the first vertical S/D structure to the second vertical S/D structure in a first horizontal direction through a vertical metal gate structure that at least partially surrounds the plurality of vertically-stacked, horizontal channels. The FET also comprises a backside inter-layer dielectric (ILD) layer disposed below the vertical metal gate structure, wherein a first thickness of the vertical metal gate structure below a bottom channel of the plurality of vertically-stacked, horizontal channels is larger than a second thickness of the vertical metal gate structure between adjacent channels of the plurality of vertically-stacked, horizontal channels.