18469465. SELF-ALIGNED BACKSIDE INTERCONNECT (QUALCOMM Incorporated)
SELF-ALIGNED BACKSIDE INTERCONNECT
Organization Name
Inventor(s)
Shreesh Narasimha of Charlotte NC US
SELF-ALIGNED BACKSIDE INTERCONNECT
This abstract first appeared for US patent application 18469465 titled 'SELF-ALIGNED BACKSIDE INTERCONNECT
Original Abstract Submitted
Disclosed are techniques for a semiconductor structure. In an aspect, a semiconductor structure includes a gate stack extending along a first direction in a front portion of the semiconductor structure, the gate stack including a first gate structure; a first channel structure disposed through the first gate structure and extending along a second direction; a first source/drain (S/D) structure adjacent the first gate structure and electrically coupled to the first channel structure; a backside dielectric layer disposed in a back portion of the semiconductor structure opposing the front portion; and a backside conductive structure in contact with the first S/D structure and disposed at least partially in the back portion of the semiconductor structure and through the backside dielectric layer. The backside conductive structure has a length in the first direction greater than a width of the first channel structure in the first direction.