ELECTRONIC DEVICES EMPLOYING THIN-GATE INSULATOR TRANSISTORS COUPLED TO VARACTORS TO REDUCE GATE-TO-SOURCE/DRAIN VOLTAGE TO AVOID VOLTAGE BREAKDOWN, AND RELATED FABRICATION METHODS

Abstract: electronic devices employing thin-gate insulator transistors coupled to varactors to reduce gate-to-source/drain voltage to avoid voltage breakdown, and related fabrication methods. the electronic device includes thin-gate insulator transistors coupled in series to provide a single output node, and with their gates controlled by a single, input node to provide an effective three (3) terminal, single transistor device. the electronic device includes varactors each coupled in series between a respective gate of a thin-gate insulator transistor and the input node to support a single input signal for the electronic device. each series coupled varactor and thin-gate insulator transistor are coupled to the input node in parallel to each other. each varactor creates a voltage division between the input signal voltage and its series connected gate of a respective thin-gate insulator transistor to prevent the respective gate-to-source/drain voltage of the thin-gate insulator transistor from exceeding its breakdown voltage.

Inventor(s): Qingqing Liang, Yan Sun, Lixin Ge, Jun Yuan, Giridhar Nallapati, Periannan Chidambaram

CPC Classification: H10D30/6735 (No explanation available)

Search for rejections for patent application number 20250185300