Qualcomm incorporated (20250098267). BACKSIDE BI-DIRECTIONAL INTERCONNECT
BACKSIDE BI-DIRECTIONAL INTERCONNECT
Organization Name
Inventor(s)
Deepak Sharma of San Diego CA US
Shreesh Narasimha of Charlotte NC US
BACKSIDE BI-DIRECTIONAL INTERCONNECT
This abstract first appeared for US patent application 20250098267 titled 'BACKSIDE BI-DIRECTIONAL INTERCONNECT
Original Abstract Submitted
disclosed are techniques for a semiconductor structure. in an aspect, a semiconductor structure includes a gate stack including a first gate structure and a second gate structure offset in a first direction. the semiconductor structure includes a first source/drain (s/d) structure adjacent the first gate structure, a second s/d structure adjacent the second gate structure, a first backside conductive structure in contact with the first s/d structure, and a second backside conductive structure in contact with the second s/d structure. the semiconductor structure includes a third backside conductive structure disposed in a back portion of the semiconductor structure opposing a front portion of the semiconductor structure, extending along a second direction, and in contact with the first backside conductive structure and the second backside conductive structure.