Qualcomm incorporated (20250098217). GATE-ALL-AROUND FIELD EFFECT TRANSISTOR STRUCTURES
GATE-ALL-AROUND FIELD EFFECT TRANSISTOR STRUCTURES
Organization Name
Inventor(s)
Shreesh Narasimha of Charlotte NC US
Deepak Sharma of San Diego CA US
GATE-ALL-AROUND FIELD EFFECT TRANSISTOR STRUCTURES
This abstract first appeared for US patent application 20250098217 titled 'GATE-ALL-AROUND FIELD EFFECT TRANSISTOR STRUCTURES
Original Abstract Submitted
a field effect transistor (fet) structure and method for making the same is disclosed. in an aspect, a fet structure comprises a gate structure, disposed between a first vertical source/drain (s/d) structure and a second vertical s/d structure, the gate structure comprising a channel structure comprising a plurality of vertically-stacked, horizontal channels connecting the first vertical s/d structure to the second vertical s/d structure horizontally through a vertical metal gate structure that at least partially surrounds the plurality of horizontal channels. the fet also comprises a backside inter-layer dielectric (ild) layer disposed below the vertical metal gate structure, wherein a first thickness of the vertical metal gate structure below a bottom channel of the plurality of horizontal channels is larger than a second thickness of the vertical metal gate structure between adjacent channels of the plurality of horizontal channels.