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Category:G11C16/28
Subcategories
This category has the following 28 subcategories, out of 28 total.
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Pages in category "G11C16/28"
The following 66 pages are in this category, out of 66 total.
1
- 17823191. PARTIAL BLOCK READ VOLTAGE OFFSET simplified abstract (Micron Technology, Inc.)
- 17953003. FLASH MEMORY DEVICE AND DATA RECOVER READ METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18296828. SEMICONDUCTOR DEVICE RELATED TO PERFORMANCE OF A PROGRAM OPERATION AND METHOD OF OPERATING THE SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18325808. MEMORY DEVICE PERFORMING ERASE OPERATION AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18356522. NONVOLATILE MEMORY DEVICE AND METHOD OF DETECTING DEFECTIVE MEMORY CELL BLOCK OF NONVOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18358644. MULTI-WAFER BONDING FOR NAND SCALING simplified abstract (SanDisk Technologies LLC)
- 18374026. NON-VOLATILE MEMORY DEVICE, OPERATING METHOD THEREOF, CONTROLLER FOR CONTROLLING THE SAME, AND STORAGE DEVICE HAVING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18388506. READ OPERATION WITH CAPACITY USAGE DETECTION SCHEME simplified abstract (Micron Technology, Inc.)
- 18393354. MANAGING TRAP-UP IN A MEMORY SYSTEM simplified abstract (Micron Technology, Inc.)
- 18402647. METHOD AND MEMORY DEVICE WITH INCREASED READ AND WRITE MARGIN simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18409089. MEMORY DEVICE, OPERATION METHOD THEREOF, AND MEMORY SYSTEM (Yangtze Memory Technologies Co., Ltd.)
- 18481786. NON-VOLATILE MEMORY WITH CURRENT DETECTION CIRCUIT (Western Digital Technologies, Inc.)
- 18483010. READ IN MULTI-TIER NON-VOLATILE MEMORY (Western Digital Technologies, Inc.)
- 18485353. MEMORY DEVICE AND MEMORY DEVICE OPERATING METHOD simplified abstract (Samsung Electronics Co., Ltd.)
- 18519248. DYNAMIC READ CALIBRATION simplified abstract (Micron Technology, Inc.)
- 18524458. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18531872. MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18598988. STORAGE DEVICE AND OPERATING METHOD THEREOF (Samsung Electronics Co., Ltd.)
- 18628483. SENSE AMPLIFIER CONTROL simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18768970. SELECTIVELY ERASING ONE OF MULTIPLE ERASE BLOCKS COUPLED TO A SAME STRING USING GATE INDUCED DRAIN LEAKAGE (Micron Technology, Inc.)
- 18768974. SELECTIVELY ERASING ONE OF MULTIPLE ERASE BLOCKS COUPLED TO A SAME STRING BY CREATING A PSEUDO PN JUNCTION (Micron Technology, Inc.)
- 18883201. ROW DECODER CIRCUIT AND CORRESPONDING METHOD OF OPERATION (STMicroelectronics International N.V.)
- 18984515. DUMMY DATA-BASED READ REFERENCE VOLTAGE SEARCH OF NAND MEMORY (Yangtze Memory Technologies Co., Ltd.)
- 19008495. BIAS VOLTAGE SCHEMES DURING PRE-PROGRAMMING AND PROGRAMMING PHASES (Micron Technology, Inc.)
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- Micron technology, inc. (20240177781). READ OPERATION WITH CAPACITY USAGE DETECTION SCHEME simplified abstract
- Micron technology, inc. (20240177795). DYNAMIC READ CALIBRATION simplified abstract
- Micron technology, inc. (20240233842). MANAGING TRAP-UP IN A MEMORY SYSTEM simplified abstract
- Micron technology, inc. (20240290413). REDUCING READ ERROR HANDLING OPERATIONS DURING POWER UP OF A MEMORY DEVICE simplified abstract
- Micron technology, inc. (20250087275). SELECTIVELY ERASING ONE OF MULTIPLE ERASE BLOCKS COUPLED TO A SAME STRING USING GATE INDUCED DRAIN LEAKAGE
- Micron technology, inc. (20250140322). SELECTIVELY ERASING ONE OF MULTIPLE ERASE BLOCKS COUPLED TO A SAME STRING BY CREATING A PSEUDO PN JUNCTION
- Micron technology, inc. (20250149094). BIAS VOLTAGE SCHEMES DURING PRE-PROGRAMMING AND PROGRAMMING PHASES
- Micron Technology, Inc. patent applications on August 29th, 2024
- Micron Technology, Inc. patent applications on February 29th, 2024
- Micron Technology, Inc. patent applications on July 11th, 2024
- Micron Technology, Inc. patent applications on March 13th, 2025
- Micron Technology, Inc. patent applications on March 6th, 2025
- Micron Technology, Inc. patent applications on May 1st, 2025
- Micron Technology, Inc. patent applications on May 30th, 2024
- Micron Technology, Inc. patent applications on May 8th, 2025
S
- Samsung electronics co., ltd. (20240194274). MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract
- Samsung electronics co., ltd. (20240242766). MEMORY DEVICE AND MEMORY DEVICE OPERATING METHOD simplified abstract
- Samsung electronics co., ltd. (20240274206). NONVOLATILE MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240331785). NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF simplified abstract
- Samsung electronics co., ltd. (20250014658). STORAGE DEVICE AND OPERATING METHOD THEREOF
- Samsung Electronics Co., Ltd. patent applications on August 15th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on August 15th, 2024
- Samsung Electronics Co., Ltd. patent applications on January 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on January 9th, 2025
- Samsung Electronics Co., Ltd. patent applications on July 18th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 13th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 13th, 2024
- Samsung Electronics Co., Ltd. patent applications on October 3rd, 2024
- Sk hynix inc. (20240161832). SEMICONDUCTOR DEVICE RELATED TO PERFORMANCE OF A PROGRAM OPERATION AND METHOD OF OPERATING THE SEMICONDUCTOR DEVICE simplified abstract
- SK hynix Inc. patent applications on May 16th, 2024
- Stmicroelectronics international n.v. (20250111878). ROW DECODER CIRCUIT AND CORRESPONDING METHOD OF OPERATION
- STMicroelectronics International N.V. patent applications on April 3rd, 2025
T
- Taiwan semiconductor manufacturing co., ltd. (20240249780). SENSE AMPLIFIER CONTROL simplified abstract
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on July 25th, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240136008). METHOD AND MEMORY DEVICE WITH INCREASED READ AND WRITE MARGIN simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20250060777). MEMORY STRUCTURE WITH OPTIMIZED LATCH CLOCK DESIGN
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 25th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 20th, 2025