Samsung electronics co., ltd. (20240194274). MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract
MEMORY DEVICE AND OPERATING METHOD THEREOF
Organization Name
Inventor(s)
Yonghyuk Choi of Suwon-si (KR)
MEMORY DEVICE AND OPERATING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194274 titled 'MEMORY DEVICE AND OPERATING METHOD THEREOF
The memory device described in the patent application includes a word line area situated between a bit line and a common source line, consisting of multiple stacks with varying resistance values in different areas.
- The first area contains stacks with a first resistance value, the second area has stacks with a second resistance value different from the first, and the third area includes stacks with a third resistance value different from the first.
- A processor is programmed to control the recovery sequence of the first, second, and third areas in the word line area.
- Key Features and Innovation:**
- Memory device with multiple stacks of varying resistance values in different areas of the word line.
- Processor-controlled recovery sequence for different resistance value areas.
- Potential Applications:**
- Data storage devices
- Computer memory systems
- Embedded systems
- Problems Solved:**
- Efficient control of memory recovery sequences
- Enhanced data storage capabilities
- Benefits:**
- Improved memory device performance
- Enhanced data retention and retrieval
- Commercial Applications:**
- Data centers
- Consumer electronics
- Automotive systems
- Prior Art:**
Prior art related to this technology may include research on memory devices with varying resistance values for improved performance and reliability.
- Frequently Updated Research:**
Stay updated on advancements in memory device technology, particularly in the area of resistance value control for enhanced memory performance.
- Questions about Memory Device Technology:**
1. What are the potential implications of using memory devices with varying resistance values in different areas? 2. How does the processor-controlled recovery sequence contribute to the overall performance of the memory device?
Original Abstract Submitted
a memory device includes a word line area that is between a bit line and a common source line. the word line area includes a plurality of stacks. a first area includes first stacks with a first resistance value in the word line area, a second area includes second stacks with a second resistance value in the word line area, wherein the second resistance value is different from the first resistance value, a third area includes third stacks with a third resistance value that different from the first resistance value, and a processor is configured to control a recovery sequence of the first area, the second area, and the third area.