Category:Yingda Dong of Los Altos CA (US)
Yingda Dong
Yingda Dong from Los Altos CA (US) has applied for patents in technology areas such as G11C16/16, G11C16/04, G11C16/28 with micron technology, inc..
Patents
Pages in category "Yingda Dong of Los Altos CA (US)"
The following 10 pages are in this category, out of 10 total.
1
- 18233420. CORRECTIVE PROGRAM VERIFY OPERATION WITH IMPROVED READ WINDOW BUDGET RETENTION simplified abstract (Micron Technology, Inc.)
- 18235183. ERASE PULSE LOOP DEPENDENT ADJUSTMENT OF SELECT GATE ERASE BIAS VOLTAGE simplified abstract (Micron Technology, Inc.)
- 18371308. ENHANCED VALLEY TRACKING WITH TRIM SETTING UPDATES IN A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18411532. DRAIN-SIDE WORDLINE VOLTAGE BOOSTING TO REDUCE LATERAL ELECTRON FIELD DURING A PROGRAMMING OPERATION simplified abstract (Micron Technology, Inc.)
- 18545888. ENHANCED GRADIENT SEEDING SCHEME DURING A PROGRAM OPERATION IN A MEMORY SUB-SYSTEM simplified abstract (Micron Technology, Inc.)
- 18622671. ELECTRONIC DEVICES COMPRISING REDUCED CHARGE CONFINEMENT REGIONS IN STORAGE NODES OF PILLARS AND RELATED METHODS AND SYSTEMS simplified abstract (Micron Technology, Inc.)
- 18768970. SELECTIVELY ERASING ONE OF MULTIPLE ERASE BLOCKS COUPLED TO A SAME STRING USING GATE INDUCED DRAIN LEAKAGE (Micron Technology, Inc.)
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- Micron technology, inc. (20240244845). ELECTRONIC DEVICES COMPRISING REDUCED CHARGE CONFINEMENT REGIONS IN STORAGE NODES OF PILLARS AND RELATED METHODS AND SYSTEMS simplified abstract
- Micron technology, inc. (20240249776). DRAIN-SIDE WORDLINE VOLTAGE BOOSTING TO REDUCE LATERAL ELECTRON FIELD DURING A PROGRAMMING OPERATION simplified abstract
- Micron technology, inc. (20250087275). SELECTIVELY ERASING ONE OF MULTIPLE ERASE BLOCKS COUPLED TO A SAME STRING USING GATE INDUCED DRAIN LEAKAGE