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20250183182. Microelectronic Assemblie (Unknown Organization)

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MICROELECTRONIC ASSEMBLIES WITH THROUGH-GLASS VIA STRESS ALLEVIATION IN GLASS CORES

Abstract: various techniques for alleviating (e.g., mitigating or reducing) stresses between glass core materials and electrically conductive materials deposited in through-glass vias (tgvs) and related devices and methods are disclosed. in one aspect, a microelectronic assembly includes a glass core having a first face and a second face opposite the first face, and a tgv extending through the glass core between the first face and the second face, wherein the tgv includes a conductive material and a buffer layer between the conductive material and the glass core, wherein a cte of the buffer layer is smaller than a cte of the conductive material.

Inventor(s): Bohan Shan, Mahdi Mohammadighaleni, Joshua Stacey, Ehsan Zamani, Aaditya Candadai, Jacob Vehonsky, Daniel Wandera, Mitchell Page, Srinivas Venkata Ramanuja Pietambaram, Gang Duan, Jeremy Ecton, Brandon C. Marin, Onur Ozkan, Vinith Bejugam, Dhruba Pattadar, Amm Hasib, Nicholas Haehn, Makoyi Watson, Sanjay Tharmarajah, Jason M. Gamba, Yuqin Li, Astitva Tripathi, Mohammad Mamunur Rahman, Haifa Hariri, Shayan Kaviani, Logan Myers, Darko Grujicic, Elham Tavakoli, Whitney Bryks, Dilan Seneviratne, Bainye Angoua, Peumie Abeyratne Kuragama, Hongxia Feng, Kyle Jordan Arrington, Bai Nie, Jose Waimin, Ryan Carrazzone, Haobo Chen, Dingying Xu, Ziyin Lin, Yiqun Bai, Xiaoying Guo, Bin Mu, Thomas S. Heaton, Rahul N. Manepalli

CPC Classification: H01L23/5384 ({Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors (, take precedence; pins attached to insulating substrates )})

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