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Create the page "H10B41/30" on this wiki! See also the search results found.
- ...10B43/27]] (7), [[:Category:G06F3/06|G06F3/06]] (6), [[:Category:H10B41/27|H10B41/27]] (5), [[:Category:G06F3/0679|G06F3/0679]] (5), [[:Category:G06F13/16|G0 IPC Code(s): G11C16/04, G11C16/30, G11C16/20, G11C16/2412 KB (1,868 words) - 09:01, 30 January 2024
- [[Category:H10B51/30]] [[Category:H10B41/10]]4 KB (586 words) - 04:14, 22 January 2024
- [[Category:H10B41/30]] [[Category:H10B41/40]]3 KB (404 words) - 00:05, 17 March 2024
- [[Category:H10B41/47]] [[Category:H10B41/30]]3 KB (385 words) - 02:40, 4 December 2023
- [[Category:H10B41/30]] [[Category:H10B43/30]]2 KB (342 words) - 05:04, 5 December 2023
- * The polysilicon layer has an area-weighted grain height mean greater than 30 nanometers. ...ed grain height mean of the polysilicon cell channel layer is greater than 30 nanometers. Other examples are disclosed and claimed.3 KB (456 words) - 06:01, 1 January 2024
- [[Category:H10B41/30]]3 KB (407 words) - 23:54, 16 March 2024
- [[Category:H10B41/30]]4 KB (513 words) - 02:07, 4 January 2024
- IPC Code(s): H01L29/51, H01L21/28, H10B51/30 [[Category:H01L29/51]][[Category:H01L21/28]][[Category:H10B51/30]][[Category:taiwan semiconductor manufacturing company, ltd.]]99 KB (12,848 words) - 09:00, 30 January 2024
- IPC Code(s): A47L9/14, A47L9/16, A47L9/28, A47L9/30, A47L5/18, A47L9/00 ...egory:A47L9/14]][[Category:A47L9/16]][[Category:A47L9/28]][[Category:A47L9/30]][[Category:A47L5/18]][[Category:A47L9/00]][[Category:samsung electronics c93 KB (13,664 words) - 08:59, 30 January 2024
- ...has applied for patents in the areas of [[:Category:H10B43/27|H10B43/27]] (30), [[:Category:G11C16/26|G11C16/26]] (18), [[:Category:H10B43/35|H10B43/35]] ..., H01L21/28, H01L29/51, H01L29/66, H01L29/78, H10B51/10, H10B51/20, H10B51/30109 KB (16,683 words) - 07:41, 22 March 2024
- ...s Co., Ltd. has filed patents in the areas of [[:Category:H04W76/30|H04W76/30]] (6 applications), [[:Category:H04W72/20|H04W72/20]] (6 applications), [[: ...ory:G06F3/0482|G06F3/0482]] (6 applications), [[:Category:G10L15/30|G10L15/30]] (5 applications), [[:Category:G06F40/20|G06F40/20]] (4 applications)36 KB (4,410 words) - 03:45, 4 January 2024
- ...HIKI KAISHA has filed patents in the areas of [[:Category:G06Q50/30|G06Q50/30]] (8 applications), [[:Category:H01M10/0525|H01M10/0525]] (7 applications), ...ategory:G06N3/04|G06N3/04]] (4 applications), [[:Category:G10L25/30|G10L25/30]] (4 applications), [[:Category:G10L25/51|G10L25/51]] (4 applications)39 KB (4,876 words) - 09:02, 30 January 2024
- ...:Category:H01L29/775|H01L29/775]] (10 applications), [[:Category:H10B41/27|H10B41/27]] (7 applications), [[:Category:H01L29/06|H01L29/06]] (7 applications), ...egory:H04W72/21|H04W72/21]] (4 applications), [[:Category:H04W76/30|H04W76/30]] (4 applications)36 KB (4,390 words) - 15:28, 6 December 2023
- ...ategory:H01L23/00|H01L23/00]] (6 applications), [[:Category:G06F9/30|G06F9/30]] (6 applications), [[:Category:H04L69/22|H04L69/22]] (6 applications) ...[[:Category:H10B43/27|H10B43/27]] (20 applications), [[:Category:H10B41/27|H10B41/27]] (16 applications), [[:Category:H10B80/00|H10B80/00]] (14 applications)38 KB (4,611 words) - 06:09, 1 January 2024
- IPC Code(s): G06F1/30, G06F11/14 ...m one or more heroic data recovery processes on the block.[[Category:G06F1/30]][[Category:G06F11/14]][[Category:micron technology, inc.]]62 KB (9,556 words) - 04:36, 20 February 2024
- IPC Code(s): G06F9/30, G06F9/448, G06F15/78, G06F9/38 ...or stored in the memory for a current or next computation.[[Category:G06F9/30]][[Category:G06F9/448]][[Category:G06F15/78]][[Category:G06F9/38]][[Categor54 KB (8,372 words) - 04:09, 9 February 2024
- IPC Code(s): H01L29/423, H01L29/788, H01L21/28, H01L29/66, H10B41/10, H10B41/30 ...y:H01L21/28]][[Category:H01L29/66]][[Category:H10B41/10]][[Category:H10B41/30]][[Category:taiwan semiconductor manufacturing co., ltd.]]74 KB (10,922 words) - 10:13, 30 January 2024
- ...areas of [[:Category:H02S40/34|H02S40/34]] (2), [[:Category:E04D1/30|E04D1/30]] (2), [[:Category:H02S20/25|H02S20/25]] (2), [[:Category:H02S40/36|H02S40/ ...[[:Category:H10B43/27|H10B43/27]] (6 applications), [[:Category:H10B41/27|H10B41/27]] (6 applications), [[:Category:H01L23/528|H01L23/528]] (5 applications)48 KB (5,904 words) - 09:33, 12 April 2024
- ...iments, the molding layer has a glass transition temperature that is 3� c.-30� c. less than the glass transition temperature of the patterned photoresi ...ode(s): H10B41/35, G11C16/10, H01L29/06, H01L29/66, H01L29/788, H10B41/41, H10B41/42105 KB (15,276 words) - 04:53, 11 April 2024