US Patent Application 18366353. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Yu Nakane of Kawasaki Kanagawa (JP)
Nobuyuki Toda of Kawasaki Kanagawa (JP)
Hiroyoshi Kitahara of Yokohama Kanagawa (JP)
Takeshi Yamamoto of Kawasaki Kanagawa (JP)
Naozumi Terada of Kawasaki Kanagawa (JP)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18366353 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device that includes a memory transistor and a MOS transistor.
- The memory transistor has a first silicon dioxide film and a first gate electrode positioned on a semiconductor substrate.
- The MOS transistor has a second silicon dioxide film and a second gate electrode positioned on the semiconductor substrate.
- The innovation ensures that there is no bird's beak formation in either the first silicon dioxide film or the first gate electrode of the memory transistor.
Original Abstract Submitted
According to the present embodiment, a semiconductor device includes a semiconductor substrate, a memory transistor, and a MOS transistor. The memory transistor includes at least a first silicon dioxide film and a first gate electrode positioned on the semiconductor substrate in order. The MOS transistor includes a second silicon dioxide film and a second gate electrode positioned on the semiconductor substrate in order. Any bird's beak is not generated in at least either the first silicon dioxide film or the first gate electrode of the memory transistor.
