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Create the page "H01L27/30" on this wiki! See also the search results found.
- ...containing gas or plasma to form WO (tungsten oxide) with a thickness of 0-30 Angstroms. ...re than 3.0. The WOhas a maximum thickness greater than 0 and no more than 30 Angstroms in a finished construction. Upper elemental-form tungsten is phys3 KB (498 words) - 05:57, 4 December 2023
- ...is made of a molybdenum tungsten (MoW) alloy with a thickness of 10 nm to 30 nm. * The thickness of the bit line electrode layer is between 10 nm and 30 nm.3 KB (399 words) - 02:48, 3 January 2024
- IPC Code(s): G11C16/04, G11C16/30, G11C16/20, G11C16/24 [[Category:G11C16/04]][[Category:G11C16/30]][[Category:G11C16/20]][[Category:G11C16/24]][[Category:sk hynix inc.]]12 KB (1,868 words) - 09:01, 30 January 2024
- [[Category:H01L27/02]] [[Category:H01L27/118]]3 KB (418 words) - 15:28, 6 December 2023
- Apple inc. (20240107782). Same Focal Plane Pixel Design for RGB-IR Image Sensors simplified abstract[[Category:H01L27/28]] [[Category:H01L27/146]]3 KB (466 words) - 06:57, 10 April 2024
- [[Category:H01L27/146]] [[Category:H01L27/30]]3 KB (448 words) - 02:31, 3 January 2024
- * Ge content is about 20 at % or less, Sb content is about 30 at % or more, and Te content is about 40 at % or more. ...that contains a Ge content of about 20 at % or less, a Sb content of about 30 at % or more, and a Te content of about 40 at % at or more.2 KB (364 words) - 05:51, 4 March 2024
- US Patent Application 18447367. Device with a High Efficiency Voltage Multiplier simplified abstract[[Category:H01L27/06]] [[Category:G11C16/30]]3 KB (460 words) - 10:01, 4 December 2023
- ...Additionally, the number of spacers in a predetermined region is at least 30% of the number of light emitting regions in that region. * The number of spacers in a predetermined region is at least 30% of the number of light emitting regions in that region.4 KB (584 words) - 02:16, 4 January 2024
- * The absolute difference between λP(1) and λP(2) is between 0 and about 30 nanometers. ...lue of the difference between λP(1) and λP(2) is from 0 nanometer to about 30 nanometer, and λP(1) and λP(2) are each independently from about 500 nano3 KB (445 words) - 04:13, 4 January 2024
- [[Category:H01L27/30]] [[Category:H01L27/28]]3 KB (432 words) - 17:54, 2 January 2024
- [[Category:H01L27/30]] [[Category:H01L27/146]]3 KB (388 words) - 18:40, 2 January 2024
- ...2]] (4), [[:Category:G06N3/04|G06N3/04]] (4), [[:Category:G10L25/30|G10L25/30]] (4), [[:Category:G10L25/51|G10L25/51]] (4) IPC Code(s): F17C13/04, F16K1/30, F16K31/42, H01M8/0408919 KB (2,842 words) - 09:01, 30 January 2024
- IPC Code(s): C07F15/00, H10K50/12, H10K85/30, C09K11/06, H10K59/123 [[Category:C07F15/00]][[Category:H10K50/12]][[Category:H10K85/30]][[Category:C09K11/06]][[Category:H10K59/123]][[Category:samsung display co40 KB (6,171 words) - 09:00, 30 January 2024
- ...of the first contact portion and a sidewall of the source/drain region is 30% to 60% of a width of the source/drain region. [[Category:H01L27/108]]2 KB (352 words) - 10:12, 4 December 2023
- IPC Code(s): G01T7/00, A61B6/00, G01T1/17, H01L27/146, H04N5/32 [[Category:G01T7/00]][[Category:A61B6/00]][[Category:G01T1/17]][[Category:H01L27/146]][[Category:H04N5/32]][[Category:canon kabushiki kaisha]]25 KB (3,551 words) - 09:00, 30 January 2024
- * The process may result in a 10% increase in photodiode area and a 30-40% increase in full well capacity. ...d nodes. The process may result in a 10% increase in photodiode area and a 30-40% increase in full well capacity.3 KB (497 words) - 00:02, 17 March 2024
- [[Category:H01L27/30]] [[Category:H01L27/28]]4 KB (588 words) - 04:37, 2 January 2024
- [[Category:H01L27/11582]] [[Category:G11C16/30]]4 KB (550 words) - 03:35, 16 April 2024
- [[Category:H01L27/146]] [[Category:G02B5/30]]3 KB (380 words) - 04:58, 5 December 2023