17831923. INFRARED ABSORPTION COMPOSITION, AND INFRARED ABSORPTION FILM, PHOTOELECTRIC DEVICE, SENSOR, IMAGE SENSOR, AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

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INFRARED ABSORPTION COMPOSITION, AND INFRARED ABSORPTION FILM, PHOTOELECTRIC DEVICE, SENSOR, IMAGE SENSOR, AND ELECTRONIC DEVICE INCLUDING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Insun Park of Suwon-si (KR)

Changki Kim of Suwon-si (KR)

Rae Sung Kim of Hwaseong-si (KR)

Dong-Seok Leem of Seongnam-si (KR)

Ohkyu Kwon of Seoul (KR)

INFRARED ABSORPTION COMPOSITION, AND INFRARED ABSORPTION FILM, PHOTOELECTRIC DEVICE, SENSOR, IMAGE SENSOR, AND ELECTRONIC DEVICE INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17831923 titled 'INFRARED ABSORPTION COMPOSITION, AND INFRARED ABSORPTION FILM, PHOTOELECTRIC DEVICE, SENSOR, IMAGE SENSOR, AND ELECTRONIC DEVICE INCLUDING THE SAME

Simplified Explanation

The abstract of the patent application describes an infrared absorption composition that includes a p-type semiconductor compound and an n-type semiconductor compound. The p-type compound consists of a first structural unit and a second structural unit with an electron donating moiety, while the n-type compound is represented by Chemical Formula 2.

  • The patent application is for an infrared absorption composition.
  • The composition includes a p-type semiconductor compound and an n-type semiconductor compound.
  • The p-type compound consists of a first structural unit represented by Chemical Formula 1.
  • The p-type compound also includes a second structural unit with an electron donating moiety.
  • The n-type compound is represented by Chemical Formula 2.

Potential Applications

  • Infrared sensors
  • Infrared imaging devices
  • Infrared communication systems

Problems Solved

  • Limited sensitivity of current infrared absorption compositions
  • Difficulty in detecting and capturing infrared radiation

Benefits

  • Improved sensitivity in detecting and capturing infrared radiation
  • Enhanced performance of infrared sensors and imaging devices
  • Increased efficiency in infrared communication systems


Original Abstract Submitted

An infrared absorption composition includes a p-type semiconductor compound including a first structural unit represented by Chemical Formula 1 and a second structural unit including an electron donating moiety; and an n-type semiconductor compound represented by Chemical Formula 2:

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