17729260. HYBRID IMAGE SENSORS HAVING OPTICAL AND SHORT-WAVE INFRARED PIXELS INTEGRATED THEREIN simplified abstract (Samsung Electronics Co., Ltd.)
HYBRID IMAGE SENSORS HAVING OPTICAL AND SHORT-WAVE INFRARED PIXELS INTEGRATED THEREIN
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Inventor(s)
HYBRID IMAGE SENSORS HAVING OPTICAL AND SHORT-WAVE INFRARED PIXELS INTEGRATED THEREIN - A simplified explanation of the abstract
This abstract first appeared for US patent application 17729260 titled 'HYBRID IMAGE SENSORS HAVING OPTICAL AND SHORT-WAVE INFRARED PIXELS INTEGRATED THEREIN
Simplified Explanation
The patent application describes an image sensor pixel that uses a perovskite material for photoelectric conversion. The pixel includes a substrate with a pixel electrode and a photoelectric conversion layer on top. A transparent electrode and a vertical electrode are also provided.
- The image sensor pixel includes a substrate with a pixel electrode and a photoelectric conversion layer made of perovskite material.
- A transparent electrode is placed on top of the perovskite layer, and a vertical electrode is connected to the pixel electrode and extends through the substrate.
- The photoelectric conversion layer consists of a perovskite layer, a first blocking layer between the pixel electrode and the perovskite layer, and a second blocking layer between the transparent electrode and the perovskite layer.
- The perovskite material has a structure of ABX, where A can be Na, K, Rb, Cs, or Fr; B can be a divalent transition metal, rare earth metal, alkaline earth metal, Ga, In, Al, Sb, Bi, or Po; and X can be Cl, Br, or I.
Potential applications of this technology:
- Image sensors in digital cameras, smartphones, and other electronic devices.
- Solar cells for efficient energy conversion.
- Medical imaging devices for improved diagnostic capabilities.
Problems solved by this technology:
- Enhanced photoelectric conversion efficiency due to the use of perovskite material.
- Improved image quality and sensitivity in image sensors.
- Higher energy conversion efficiency in solar cells.
Benefits of this technology:
- Higher resolution and better image quality in digital cameras and smartphones.
- Increased energy efficiency in solar cells, leading to improved renewable energy utilization.
- Potential for more accurate and detailed medical imaging for better diagnosis.
Original Abstract Submitted
An image sensor pixel includes a substrate having a pixel electrode on a light receiving surface thereof, and a photoelectric conversion layer including a perovskite material, on the pixel electrode. A transparent electrode is provided on the photoelectric conversion layer, and a vertical electrode is provided, which is electrically connected to the pixel electrode and extends at least partially through the substrate. The photoelectric conversion layer includes a perovskite layer, a first blocking layer extending between the pixel electrode and the perovskite layer, and a second blocking layer extending between the transparent electrode and the perovskite layer. The perovskite material may have a material structure of ABX, ABX, ABX, ABX, ABX, or ABX, where: n is a positive integer in a range from 2 to 6; A includes at least one material selected from a group consisting of Na, K, Rb, Cs and Fr; B includes at least one material selected from a divalent transition metal, a rare earth metal, an alkaline earth metal, Ga, In, Al, Sb, Bi, and Po; and X includes at least one material selected from Cl, Br, and I.
