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Category:H01F41/34
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Pages in category "H01F41/34"
The following 12 pages are in this category, out of 12 total.
1
- 18064367. MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18158086. Highly Physical Ion Resistive Spacer To Define Chemical Damage Free Sub 60nm Mram Devices simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18165447. MAGNETIC PROPERTY MEASURING SYSTEM, A METHOD FOR MEASURING MAGNETIC PROPERTIES, AND A METHOD FOR MANUFACTURING A MAGNETIC MEMORY DEVICE USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18511133. MEMORY CELL WITH TOP ELECTRODE VIA simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18521560. SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHAPED BOTTOM ELECTRODE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
T
- Taiwan semiconductor manufacturing co., ltd. (20240099151). SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHAPED BOTTOM ELECTRODE simplified abstract
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
U
- US Patent Application 18232027. SELF-ALIGNED ENCAPSULATION HARD MASK TO SEPARATE PHYSICALLY UNDER-ETCHED MTJ CELLS TO REDUCE CONDUCTIVE RE-DEPOSITION simplified abstract
- US Patent Application 18300162. Vertically Integrated Device Stack Including System on Chip and Power Management Integrated Circuit simplified abstract
- US Patent Application 18447383. MRAM Fabrication and Device simplified abstract
- US Patent Application 18447482. INDUCTIVE DEVICE simplified abstract