US Patent Application 18447482. INDUCTIVE DEVICE simplified abstract
Contents
INDUCTIVE DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==
[[Category:Wei-Yu Chou of Taichung City (TW)]]
[[Category:Yang-Che Chen of Hsin-Chu City (TW)]]
[[Category:Chen-Hua Lin of Douliu City (TW)]]
[[Category:Victor Chiang Liang of Hsinchu City (TW)]]
[[Category:Huang-Wen Tseng of Zhubei City (TW)]]
[[Category:Chwen-Ming Liu of Hsinchu (TW)]]
INDUCTIVE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447482 titled 'INDUCTIVE DEVICE
Simplified Explanation
- The patent application describes an inductive device that has an insulating layer, a lower magnetic layer, and an upper magnetic layer. - The insulating layer is designed in a way that it does not separate the lower and upper magnetic layers at the outer edges of the device. - The lower and upper magnetic layers form a continuous magnetic layer around the insulating layer and the conductors of the device. - Magnetic leakage paths are created by forming openings through the upper magnetic layer. - These openings are formed using semiconductor processes that are more precise and accurate compared to processes used for the insulating layer. - This helps to reduce magnetic leakage path variation within the device and from device to device.
Original Abstract Submitted
An inductive device includes an insulating layer, a lower magnetic layer, and an upper magnetic layer that are formed such that the insulating layer does not separate the lower magnetic layer and the upper magnetic layer at the outer edges or wings of the inductive device. The lower magnetic layer and the upper magnetic layer form a continuous magnetic layer around the insulating layer and the conductors of the inductive device. Magnetic leakage paths are provided by forming openings through the upper magnetic layer. The openings may be formed through the upper magnetic layer by semiconductor processes that have relatively higher precision and accuracy compared to semiconductor processes for forming the insulating layer such as spin coating. This reduces magnetic leakage path variation within the inductive device and from inductive device to inductive device.
