MICRON TECHNOLOGY, INC. patent applications published on December 28th, 2023

Summary of the patent applications from MICRON TECHNOLOGY, INC. on December 28th, 2023

Micron Technology, Inc. has recently filed several patents related to memory arrays, memory circuitry, semiconductor devices, and memory fault notification. These patents aim to improve the efficiency, performance, and reliability of memory systems.

One patent describes a method for forming a memory array using memory cells arranged in stacks. The method involves using alternating tiers in the lower and upper stacks, with sacrificial material in the channel openings. Non-stoichiometric silicon nitride is used in one of the tiers, and channel-material strings are formed after removing the sacrificial material.

Another patent focuses on forming memory circuitry using transistors and conductive vias. The method involves creating transistors with source/drain regions and a channel region, and forming conductive vias to connect to the source/drain regions. Conductor material is patterned to create horizontal lines and trenches, with digitlines formed in the trenches. Storage elements are then connected to the conductor vias.

A different patent describes an apparatus and method for operating a memory cell with two transistors. The first transistor has a channel region connected to a data line and a conductive region, while the second transistor has a channel region connected to the data line and a charge storage structure. The memory cell uses separate gates for the transistors and offers benefits such as higher data density and faster data access.

Another patent focuses on protecting components on a circuit board, particularly memory devices. The circuit board has structures that shield the memory devices and components from external forces, enhancing durability and reducing the risk of damage.

Additionally, there are patents related to color correction in light emitting diodes (LEDs), releasing thinned semiconductor dies from a mount tape, and detecting and notifying faults in memory devices. These patents offer benefits such as accurate color correction, efficient release of semiconductor dies, and timely fault detection in memory devices.

Notable applications of these patents include memory arrays, data storage devices, computer memory modules, solid-state drives (SSDs), lighting systems, display technologies, and integrated circuits.

Summary in bullet points:

• Memory array formation using stacked memory cells with alternating tiers and sacrificial material.
• Memory circuitry formation using transistors, conductive vias, and digitlines.
• Memory cell operation with two transistors and separate gates for improved performance.
• Protection of memory devices and components on circuit boards from external forces.
• Color correction in LEDs using inkjet printing of selected phosphor.
• Efficient release of thinned semiconductor dies from a mount tape.
• Fault detection and notification in memory devices for improved reliability.

Notable applications:

• Memory arrays
• Data storage devices
• Computer memory modules
• Solid-state drives (SSDs)
• Lighting systems
• Display technologies
• Integrated circuits

Patent applications for MICRON TECHNOLOGY, INC. on December 28th, 2023

APPARATUSES AND METHODS FOR CONFIGURABLE MEMORY ARRAY BANK ARCHITECTURES (18326303)

Main Inventor

Dean D. Gans

MEMORY OPERATION BASED ON BLOCK-ASSOCIATED TEMPERATURE (17848061)

Main Inventor

Pitamber Shukla

MEMORY BLOCK UTILIZATION IN MEMORY SYSTEMS (17846761)

Main Inventor

Deping He

SCALABILITY OF DATA CURSORS IN MEMORY SUBSYSTEMS WHILE REDUCING RESOURCE REQUIREMENTS (17852099)

Main Inventor

Luca Bert

APPARATUSES AND METHODS FOR MEMORY ALIGNMENT (18343929)

Main Inventor

John D. Leidel

VECTOR POPULATION COUNT DETERMINATION IN MEMORY (18202161)

Main Inventor

Sanjay Tiwari

MEMORY DEVICE WITH STATUS FEEDBACK FOR ERROR CORRECTION (18213732)

Main Inventor

Scott E. Schaefer

OUT-OF-ORDER PROGRAMMING OF FIRST WORDLINE IN A PHYSICAL UNIT OF A MEMORY DEVICE (18203223)

Main Inventor

Deping He

UNLOADED CACHE BYPASS (18215115)

Main Inventor

Emanuele Confalonieri

CACHE BYPASS (18215117)

Main Inventor

Emanuele Confalonieri

DEEP LEARNING ACCESS AND AUTHENTICATION IN A COMPUTING ARCHITECTURE (17808921)

Main Inventor

Poorna Kale

DETECTING INFORMATION MODIFICATION IN A MEMORY SYSTEM (17850606)

Main Inventor

James Ruane

SELF-REFRESH STATE WITH DECREASED POWER CONSUMPTION (17808818)

Main Inventor

Shawn M. Hilde

ADJUSTING REFRESH RATE DURING SELF-REFRESH STATE (17849100)

Main Inventor

John E. Riley

REFRESH DETERMINATION USING MEMORY CELL PATTERNS (17852221)

Main Inventor

Umberto di Vincenzo

ASYNCHRONOUS SIGNAL TO COMMAND TIMING CALIBRATION FOR TESTING ACCURACY (17846967)

Main Inventor

Yoshinori Fujiwara

APPARATUSES AND METHODS FOR INPUT RECEIVER CIRCUITS AND RECEIVER MASKS FOR SAME (18312747)

Main Inventor

Dean D. Gans

MEMORY FAULT NOTIFICATION (17851721)

Main Inventor

Scott E. Schaefer

PERFORMING SELECT GATE INTEGRITY CHECKS TO IDENTIFY AND INVALIDATE DEFECTIVE BLOCKS (18242884)

Main Inventor

Zhongguang Xu

THIN DIE RELEASE FOR SEMICONDUCTOR DEVICE ASSEMBLY (18243664)

Main Inventor

Andrew M. Bayless

FACE-TO-FACE SEMICONDUCTOR DEVICE WITH FAN-OUT PORCH (18241592)

Main Inventor

Jong Sik Paek

MICROELECTRONIC WORKPIECE PROCESSING SYSTEMS AND ASSOCIATED METHODS OF COLOR CORRECTION (18464789)

Main Inventor

Kevin Tetz

CIRCUIT BOARD STRUCTURES FOR COMPONENT PROTECTION (17849093)

Main Inventor

Bradley Bitz

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SEPARATE READ AND WRITE GATES (18244069)

Main Inventor

Eric S. Carman

Memory Circuitry And Method Used In Forming Memory Circuitry (18243298)

Main Inventor

Guangjun Yang

Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells (18244169)

Main Inventor

Daniel Billingsley