18244169. Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract (MICRON TECHNOLOGY, INC.)

Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells

Organization Name

MICRON TECHNOLOGY, INC.

Inventor(s)

Daniel Billingsley of Meridian ID (US)

Jordan D. Greenlee of Boise ID (US)

John D. Hopkins of Meridian ID (US)

Yongjun Jeff Hu of Boise ID (US)

Swapnil Lengade of Boise ID (US)

Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells - A simplified explanation of the abstract

This abstract first appeared for US patent application 18244169 titled 'Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells

Simplified Explanation

The abstract describes a method for forming a memory array using memory cells arranged in stacks. The lower stack consists of alternating tiers, while the upper stack also consists of alternating tiers. The lower stack has channel openings with sacrificial material, and one of the tiers in the upper or lower stack is made of non-stoichiometric silicon nitride. The upper stack has channel openings that stop on the lower tier of the upper stack. The sacrificial material is removed, and channel-material strings are formed in the channel openings.

• Method for forming a memory array using memory cells in stacks
• Lower stack consists of alternating tiers
• Upper stack also consists of alternating tiers
• Lower stack has channel openings with sacrificial material
• One tier in upper or lower stack made of non-stoichiometric silicon nitride
• Upper stack has channel openings that stop on lower tier of upper stack
• Sacrificial material is removed and channel-material strings are formed in channel openings

Potential Applications

• Memory arrays
• Data storage devices

Problems Solved

• Efficient formation of memory arrays
• Improved memory cell performance

Benefits

• Higher memory array density
• Enhanced memory cell performance

Original Abstract Submitted

A method used in forming a memory array comprising strings of memory cells comprises forming an upper stack directly above a lower stack. The lower stack comprises vertically-alternating lower-first-tiers and lower-second-tiers. The upper stack comprises vertically-alternating upper-first-tiers and upper-second-tiers. Lower channel openings extend through the lower-first-tiers and the lowers-second-tiers. The lower channel openings have sacrificial material therein. An upper of the lower-first-tiers or a lower of the upper-first-tiers comprises non-stoichiometric silicon nitride comprising (a) or (b), where (a): a nitrogen-to-silicon atomic ratio greater than 1.33 and less than 1.5; and (b): a nitrogen-to-silicon atomic ratio greater than or equal to 1.0 and less than 1.33. A higher of the upper-first-tiers that is above said lower upper-first-tier comprises silicon nitride not having either the (a) or the (b). Upper channel openings are etched through the upper-first-tiers and the upper-second-tiers to stop on said upper lower-first-tier or said lower upper-first-tier. After the stop, the sacrificial material is removed from the lower channel openings and form channel-material strings in the upper and lower channel openings. Other embodiments, including structure independent of method, are disclosed.