18243298. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (MICRON TECHNOLOGY, INC.)
Memory Circuitry And Method Used In Forming Memory Circuitry
Organization Name
Inventor(s)
Guangjun Yang of Meridian ID (US)
Memory Circuitry And Method Used In Forming Memory Circuitry - A simplified explanation of the abstract
This abstract first appeared for US patent application 18243298 titled 'Memory Circuitry And Method Used In Forming Memory Circuitry
Simplified Explanation
The abstract describes a method for forming memory circuitry using transistors and conductive vias. The method involves forming transistors with source/drain regions and a channel region, and a conductive gate near the channel region. Conductive vias are created to directly connect to one of the source/drain regions, while conductor material is formed to directly connect to the other source/drain region. The conductor material is patterned to create horizontal lines with trenches between them, and digitlines are formed in the trenches. The conductor material is then patterned in another direction to create conductor vias that connect to the one source/drain region. Storage elements are formed and connected to the conductor vias.
- Method for forming memory circuitry using transistors and conductive vias
- Transistors are formed with source/drain regions and a channel region
- Conductive vias are created to directly connect to one of the source/drain regions
- Conductor material is formed to directly connect to the other source/drain region
- Conductor material is patterned to create horizontal lines with trenches between them
- Digitlines are formed in the trenches
- Conductor material is patterned in another direction to create conductor vias that connect to the one source/drain region
- Storage elements are formed and connected to the conductor vias
Potential Applications
This technology can be applied in various memory circuitry systems, such as:
- Computer memory modules
- Solid-state drives (SSDs)
- Embedded memory in electronic devices
- High-performance computing systems
Problems Solved
The method described in the patent application solves several problems in memory circuitry formation, including:
- Efficiently connecting transistors and conductive vias
- Simplifying the process of forming digitlines and conductor vias
- Improving the overall performance and reliability of memory circuitry
Benefits
The use of this technology offers several benefits, including:
- Enhanced memory circuitry performance
- Improved data storage and retrieval speeds
- Increased memory density and capacity
- Simplified manufacturing process for memory circuitry
Original Abstract Submitted
A method used in forming memory circuitry comprises forming transistors individually comprising one source/drain region and another source/drain region. A channel region is between the one and the another source/drain regions. A conductive gate is operatively proximate the channel region. Conductive vias are formed that are individually directly electrically coupled to the another source/drain region. Conductor material is formed that is directly coupled to the one source/drain region. The conductor material is patterned in one direction to form horizontal lines of the conductor material that have a horizontal trench between immediately-adjacent of the horizontal conductor-material lines. In a self-aligned manner, digitlines are formed that are individually in individual of the trenches between the immediately-adjacent conductor-material lines. After forming the digitlines, the conductor material is patterned in another direction that is horizontally angled from the one direction to form conductor vias that are individually directly electrically coupled to the one source/drain region. A plurality of storage elements is formed that are individually directly electrically coupled to individual of the conductor vias. Other aspects, including structure independent of method, are disclosed.
