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Category:H01L21/74
Subcategories
This category has the following 11 subcategories, out of 11 total.
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D
I
K
M
P
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Pages in category "H01L21/74"
The following 55 pages are in this category, out of 55 total.
1
- 17527229. REPLACEMENT BURIED POWER RAIL simplified abstract (International Business Machines Corporation)
- 17528858. BOTTOM DIELECTRIC ISOLATION INTEGRATION WITH BURIED POWER RAIL simplified abstract (International Business Machines Corporation)
- 17531837. BURIED POWER RAIL AFTER REPLACEMENT METAL GATE simplified abstract (International Business Machines Corporation)
- 18059098. ADJACENT BURIED POWER RAIL FOR STACKED FIELD-EFFECT TRANSISTOR ARCHITECTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18125512. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18141313. BACKSIDE CONTACT FORMATION USING PILLAR PATTERNING simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18414733. SENSOR FOR MEASURING A GAS PROPERTY simplified abstract (Infineon Technologies AG)
- 18437522. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 18466783. HANDLER WAFER WITH LOW OVERLAY RESIDUAL BACKSIDE PATTERNING (International Business Machines Corporation)
- 18518706. SHARED WELL STRUCTURE MANUFACTURING METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18537651. FIELD-EFFECT TRANSISTORS WITH INTERLEAVED FINGER CONFIGURATION simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18543769. REDUCED ESR IN TRENCH CAPACITOR simplified abstract (Texas Instruments Incorporated)
- 18622142. EMBEDDED SEMICONDUCTOR REGION FOR A LATCH-UP SUSCEPTIBILITY IMPROVEMENT simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18649986. SEMICONDUCTOR WITH THROUGH-SUBSTRATE INTERCONNECT simplified abstract (Micron Technology, Inc.)
- 18668333. BREAKDOWN VOLTAGE CAPABILITY OF HIGH VOLTAGE DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18674006. THERMAL ROUTING TRENCH BY ADDITIVE PROCESSING simplified abstract (Texas Instruments Incorporated)
- 18971358. SEMICONDUCTOR STRUCTURE (MediaTek Inc.)
I
- Infineon technologies ag (20240248071). SENSOR FOR MEASURING A GAS PROPERTY simplified abstract
- Infineon Technologies AG patent applications on July 25th, 2024
- International business machines corporation (20240178050). ADJACENT BURIED POWER RAIL FOR STACKED FIELD-EFFECT TRANSISTOR ARCHITECTURE simplified abstract
- International business machines corporation (20240429097). SELF-ALIGNED BACKSIDE CONTACT
- International business machines corporation (20240429098). MERGED SELF-ALIGNED BACKSIDE CONTACT
- International business machines corporation (20250087527). HANDLER WAFER WITH LOW OVERLAY RESIDUAL BACKSIDE PATTERNING
- International Business Machines Corporation patent applications on December 26th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on January 25th, 2024
- International Business Machines Corporation patent applications on March 13th, 2025
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on May 30th, 2024
M
- Micron technology, inc. (20240282620). SEMICONDUCTOR WITH THROUGH-SUBSTRATE INTERCONNECT simplified abstract
- Micron Technology, Inc. patent applications on August 22nd, 2024
- Murata manufacturing co., ltd. (20240413243). High Voltage Switching Device
- Murata Manufacturing Co., Ltd. patent applications on December 12th, 2024
R
S
- Samsung electronics co., ltd. (20240203793). BACKSIDE CONTACT FORMATION USING PILLAR PATTERNING simplified abstract
- Samsung electronics co., ltd. (20250081562). SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN REGION WITH UNDERBLOCKING LAYER THEREON
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 20th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 20th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 6th, 2025
T
- Taiwan semiconductor manufacturing company, ltd. (20240243129). EMBEDDED SEMICONDUCTOR REGION FOR A LATCH-UP SUSCEPTIBILITY IMPROVEMENT simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240321894). BREAKDOWN VOLTAGE CAPABILITY OF HIGH VOLTAGE DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379563). REDUCING RC DELAY IN SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20250006557). Backside Via and Dual Side Power Rail For Epitaxial Source/Drain Structure
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on January 2nd, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on July 18th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 6th, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on November 14th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on September 26th, 2024
- Texas instruments incorporated (20240312862). THERMAL ROUTING TRENCH BY ADDITIVE PROCESSING simplified abstract
- Texas Instruments Incorporated patent applications on September 19th, 2024
U
- US Patent Application 17827824. HIGH VOLTAGE DEVICE AND METHOD FOR FORMING THE SAME simplified abstract
- US Patent Application 18358321. Buried Metal for FinFET Device and Method simplified abstract
- US Patent Application 18361560. REDUCING RC DELAY IN SEMICONDUCTOR DEVICES simplified abstract
- US Patent Application 18362248. ETCH PROFILE CONTROL OF INTERCONNECT STRUCTURES simplified abstract