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Category:CPC H01L29/0847
Pages in category "CPC H01L29/0847"
The following 131 pages are in this category, out of 131 total.
1
- 18105887. SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18143095. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (United Microelectronics Corp.)
- 18149393. SEMICONDUCTOR DEVICE STRUCTURE WITH SOURCE/DRAIN STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18189442. SELECTIVE CONTACT ON SOURCE AND DRAIN simplified abstract (QUALCOMM Incorporated)
- 18233693. 3DSFET DEVICE INCLUDING RESTRUCTURED LOWER SOURCE/DRAIN REGION HAVING INCREASED CONTACT AREA simplified abstract (Samsung Electronics Co., Ltd.)
- 18335691. FUNNELED SOURCE/DRAIN INTERFACIAL REGION (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18345931. TRANSISTORS WITH ANTIMONY AND PHOSPHORUS DOPED EPITAXIAL SOURCE/DRAIN LAYERS (Intel Corporation)
- 18346227. PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE AND DRAIN (Intel Corporation)
- 18352708. SOURCE/DRAIN FEATURES FOR STACKED MULTI-GATE DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18409559. SEMICONDUCTOR DEVICE WITH DOPED SOURCE/DRAIN REGION (SAMSUNG ELECTRONICS CO., LTD.)
- 18437321. DIFFUSION BARRIER LAYER FOR SOURCE AND DRAIN STRUCTURES TO INCREASE TRANSISTOR PERFORMANCE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18440526. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB SOURCE OR DRAIN STRUCTURES simplified abstract (Intel Corporation)
- 18455446. RECESSED VIA WITH CONDUCTIVE LINK TO ADJACENT CONTACT (Intel Corporation)
- 18507039. SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 18588586. SEMICONDUCTOR DEVICE HAVING ASYMMETRICAL SOURCE/DRAIN simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18612701. SEMICONDUCTOR DEVICE WITH DOPED STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18636490. Source/Drain Device and Method of Forming Thereof simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18638134. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18676686. SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME (Samsung Electronics Co., Ltd.)
- 18731465. DEVICE WITH EPITAXIAL SOURCE/DRAIN REGION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18732958. VERTICAL CHANNEL TRANSISTORS HAVE ENHANCED SOURCE-TO-DRAIN CURRENT PATHS THEREIN (Samsung Electronics Co., Ltd.)
I
- IMEC VZW Patent Application Trends in 2024
- Industrial Technology Research Institute Patent Application Trends in 2025
- Intel corporation (20250006790). TRANSISTORS WITH ANTIMONY AND PHOSPHORUS DOPED EPITAXIAL SOURCE/DRAIN LAYERS
- Intel corporation (20250006791). PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE AND DRAIN
- Intel corporation (20250072069). RECESSED VIA WITH CONDUCTIVE LINK TO ADJACENT CONTACT
- INTEL CORPORATION Patent Application Trends in 2025
- Intel Corporation Patent Application Trends in 2025
- Intel Corporation patent applications on February 27th, 2025
- Intel Corporation patent applications on February 6th, 2025
- Intel Corporation patent applications on January 2nd, 2025
- International business machines corporation (20240421191). FUNNELED SOURCE/DRAIN INTERFACIAL REGION
- International business machines corporation (20240429283). BACKSIDE EPITAXY FOR SEMICONDUCTOR STRUCTURES
- International business machines corporation (20240429284). FORK SHEET DEVICE
- International Business Machines Corporation Patent Application Trends in 2025
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on December 19th, 2024
- International Business Machines Corporation patent applications on December 26th, 2024
- International Business Machines Corporation patent applications on February 6th, 2025
- IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) Patent Application Trends in 2024
M
Q
- Qualcomm incorporated (20240321965). SELECTIVE CONTACT ON SOURCE AND DRAIN simplified abstract
- Qualcomm Incorporated Patent Application Trends in 2024
- QUALCOMM INCORPORATED Patent Application Trends in 2024
- Qualcomm Incorporated Patent Application Trends in 2025
- Qualcomm incorporated Patent Application Trends in 2025
- QUALCOMM Incorporated patent applications on September 26th, 2024
S
- SAMSUNG ELECTRONICS CO., LTD Patent Application Trends in 2024
- Samsung electronics co., ltd. (20240204050). SEMICONDUCTOR DEVICE HAVING ASYMMETRICAL SOURCE/DRAIN simplified abstract
- Samsung electronics co., ltd. (20240274664). INTEGRATED CIRCUIT DEVICES simplified abstract
- Samsung electronics co., ltd. (20240274665). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240304669). 3DSFET DEVICE INCLUDING RESTRUCTURED LOWER SOURCE/DRAIN REGION HAVING INCREASED CONTACT AREA simplified abstract
- Samsung electronics co., ltd. (20240355883). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240379760). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240405073). SEMICONDUCTOR DEVICE
- Samsung electronics co., ltd. (20240413206). SEMICONDUCTOR DEVICE WITH DOPED SOURCE/DRAIN REGION
- Samsung electronics co., ltd. (20250015134). SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME
- Samsung electronics co., ltd. (20250015135). VERTICAL CHANNEL TRANSISTORS HAVE ENHANCED SOURCE-TO-DRAIN CURRENT PATHS THEREIN
- Samsung electronics co., ltd. (20250063782). INTEGRATED CIRCUIT DEVICE INCLUDING WIMPY TRANSISTOR STACK WITH THICK SOURCE/DRAIN ISOLATION LAYER AND METHODS OF FORMING TING THE SAME
- Samsung Electronics Co., Ltd. Patent Application Trends in 2024
- SAMSUNG ELECTRONICS CO., LTD. Patent Application Trends in 2024
- Samsung electronics Co., Ltd. Patent Application Trends in 2024
- Samsung electronics CO., LTD. Patent Application Trends in 2025
- SAMSUNG ELECTRONICS CO., LTD. Patent Application Trends in 2025
- Samsung Electronics Co., Ltd. patent applications on August 15th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on August 15th, 2024
- Samsung Electronics Co., Ltd. patent applications on December 12th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on December 12th, 2024
- Samsung Electronics Co., Ltd. patent applications on December 5th, 2024
- Samsung Electronics Co., Ltd. patent applications on February 20th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 20th, 2025
- Samsung Electronics Co., Ltd. patent applications on February 6th, 2025
- Samsung Electronics Co., Ltd. patent applications on January 30th, 2025
- Samsung Electronics Co., Ltd. patent applications on January 9th, 2025
- Samsung Electronics Co., Ltd. patent applications on June 20th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 20th, 2024
- Samsung Electronics Co., Ltd. patent applications on November 14th, 2024
- Samsung Electronics Co., Ltd. patent applications on October 24th, 2024
- Samsung Electronics Co., Ltd. patent applications on September 12th, 2024
- Sony Corporation Patent Application Trends in 2024
- SONY GROUP CORPORATION Patent Application Trends in 2024
T
- Taiwan Semiconductor Manufacturing Co., Ltd Patent Application Trends in 2024
- Taiwan semiconductor manufacturing co., ltd. (20240222434). SEMICONDUCTOR DEVICE STRUCTURE WITH SOURCE/DRAIN STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan Semiconductor Manufacturing Co., Ltd. Patent Application Trends in 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. Patent Application Trends in 2025
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on July 4th, 2024
- Taiwan Semiconductor Manufacturing Company Limited Patent Application Trends in 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. Patent Application Trends in 2025
- Taiwan Semiconductor Manufacturing Company Patent Application Trends in 2025
- Taiwan semiconductor manufacturing company, ltd. (20240234506). SEMICONDUCTOR DEVICE WITH DOPED STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240243174). DIFFUSION BARRIER LAYER FOR SOURCE AND DRAIN STRUCTURES TO INCREASE TRANSISTOR PERFORMANCE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240258373). TRANSISTOR DEVICE HAVING A GATE SETBACK FROM A GATE DIELECTRIC
- Taiwan semiconductor manufacturing company, ltd. (20240258373). TRANSISTOR DEVICE HAVING A GATE SETBACK FROM A GATE DIELECTRIC simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240266398). Source/Drain Device and Method of Forming Thereof simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240282819). SOURCE/DRAIN FEATURES FOR STACKED MULTI-GATE DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240282820). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240321966). DEVICE WITH EPITAXIAL SOURCE/DRAIN REGION simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379758). SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379759). SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379761). SEMICONDUCTOR DEVICE STRUCTURE INTEGRATING AIR GAPS AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379762). EPITAXIAL SOURCE/DRAIN STRUCTURE AND METHOD simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20250063783). CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD
- Taiwan Semiconductor Manufacturing Company, Ltd. Patent Application Trends in 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. Patent Application Trends in 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. Patent Application Trends in 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on August 1st, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on August 22nd, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on August 8th, 2024
- Taiwan Semiconductor Manufacturing Company, LTD. patent applications on February 13th, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 20th, 2025
- Taiwan Semiconductor Manufacturing Company, LTD. patent applications on February 6th, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on July 11th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on July 18th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on November 14th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on September 26th, 2024
- ThinSiC Inc Patent Application Trends in 2024
- TOKYO ELECTRON LIMITED Patent Application Trends in 2024
- Tokyo Electron Limited Patent Application Trends in 2024