FUNNELED SOURCE/DRAIN INTERFACIAL REGION

Organization Name

international business machines corporation

Inventor(s)

Shogo Mochizuki of Mechanicville NY (US)

FUNNELED SOURCE/DRAIN INTERFACIAL REGION

This abstract first appeared for US patent application 20240421191 titled 'FUNNELED SOURCE/DRAIN INTERFACIAL REGION

Original Abstract Submitted

a transistor includes a funneled interfacial source/drain (s/d) region that includes a narrow throat that is connected to or is an interface to the nanolayer channel. the funneled interfacial s/d region may also include a wide throat that is an interface to a remainder of the s/d region. the funneled interfacial source/drain (s/d) region may reduce parasitic resistance or impedance from the s/d region into or out of a nanolayer channel.