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Category:CPC H10D62/8325
Pages in category "CPC H10D62/8325"
The following 26 pages are in this category, out of 26 total.
1
- 18581445. WAFER AND METHOD FOR MANUFACTURING THE SAME (Kabushiki Kaisha Toshiba)
- 18827272. VERTICAL POWER SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE (SIC) SEMICONDUCTOR BODY (Infineon Technologies AG)
- 18836937. SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE (SUMITOMO ELECTRIC INDUSTRIES, LTD.)
- 18891853. SILICON CARBIDE POWER MOSFET AND METHOD FOR MANUFACTURING SAME (Microchip Technology Incorporated)
- 18965021. SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR (KABUSHIKI KAISHA TOSHIBA)
- 18989246. SIC SUBSTRATE AND SIC COMPOSITE SUBSTRATE (NGK INSULATORS, LTD.)
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- Kabushiki kaisha toshiba (20250089322). WAFER AND METHOD FOR MANUFACTURING THE SAME
- Kabushiki kaisha toshiba (20250098251). SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR
- Kabushiki Kaisha Toshiba Patent Application Trends in 2025
- Kabushiki Kaisha Toshiba patent applications on March 13th, 2025
- KABUSHIKI KAISHA TOSHIBA patent applications on March 20th, 2025