OHMIC CONTACT FORMATION IN A SIC-BASED ELECTRONIC DEVICE

Abstract: a method for manufacturing a sic-based electronic device, comprising the steps of: implanting, on a front side of a solid body made of sic having a conductivity of an n type, dopant species of a p type thus forming an implanted region, which extends in the solid body starting from the front side and has a top surface coplanar with the front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region to temperatures comprised between 1500� c. and 2600� c. so as to form a carbon-rich electrical-contact region at the implanted region. the carbon-rich electrical-contact region forms an ohmic contact.

Inventor(s): Simone RASCUNÁ, Mario Giuseppe SAGGIO, Giovanni FRANCO

CPC Classification: H10D62/8325 (No explanation available)

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