18989246. SIC SUBSTRATE AND SIC COMPOSITE SUBSTRATE (NGK INSULATORS, LTD.)
SIC SUBSTRATE AND SIC COMPOSITE SUBSTRATE
Organization Name
Inventor(s)
Kiyoshi Matsushima of Nagoya-shi JP
Jun Yoshikawa of Nagoya-shi JP
SIC SUBSTRATE AND SIC COMPOSITE SUBSTRATE
This abstract first appeared for US patent application 18989246 titled 'SIC SUBSTRATE AND SIC COMPOSITE SUBSTRATE
Original Abstract Submitted
There is provided a SiC substrate including a biaxially oriented SiC layer, and the SiC substrate and the biaxially oriented SiC layer have an off angle. With regard to this SiC substrate, in an XRT image obtained by subjecting a certain 4 mm-square region in the biaxially oriented SiC layer to X-ray topography (XRT) measurement, with respect to a total number of basal plane dislocations (BPD), a percentage of the number of BPDs such that an absolute value of an acute angle between a BPD extension direction and the [11-20] direction is 15° or less is 60% or more. The BPD extension direction is defined as a direction of a line segment connecting an end point of a BPD observed as a linear shape and a point 150 μm away from the end point along the linear BPD in the XRT image.