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Category:C30B29/36
Subcategories
This category has the following 16 subcategories, out of 16 total.
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Pages in category "C30B29/36"
The following 36 pages are in this category, out of 36 total.
1
- 18271447. SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (Sumitomo Electric Industries, Ltd.)
- 18273774. SILICON CARBIDE EPITAXIAL SUBSTRATE simplified abstract (Sumitomo Electric Industries, Ltd.)
- 18367753. SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER simplified abstract (RESONAC CORPORATION)
- 18435218. SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL simplified abstract (DENSO CORPORATION)
- 18435218. SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18468030. SILICON CARBIDE SINGLE CRYSTAL INGOT, SILICON CARBIDE WAFER, AND METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL simplified abstract (DENSO CORPORATION)
- 18468030. SILICON CARBIDE SINGLE CRYSTAL INGOT, SILICON CARBIDE WAFER, AND METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18471463. SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (DENSO CORPORATION)
- 18471463. SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18523840. SiC EPITAXIAL WAFER simplified abstract (RESONAC CORPORATION)
- 18575557. SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SUBSTRATE simplified abstract (SUMITOMO ELECTRIC INDUSTRIES, LTD.)
- 18588308. SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL simplified abstract (DENSO CORPORATION)
- 18588308. SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18777952. SILICON CARBIDE SINGLE CRYSTAL MANUFACTURING APPARATUS, COMPUTING DEVICE, AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL (DENSO CORPORATION)
- 18777952. SILICON CARBIDE SINGLE CRYSTAL MANUFACTURING APPARATUS, COMPUTING DEVICE, AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18833358. SILICON CARBIDE EPITAXIAL SUBSTRATE (Sumitomo Electric Industries, Ltd.)
- 18835719. SILICON CARBIDE SUBSTRATE, METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE, AND MANUFACTURING APPARATUS FOR SILICON CARBIDE SUBSTRATE (Sumitomo Electric Industries, Ltd.)
- 18887762. POLYCRYSTALLINE SILICON CARBIDE (SIC) SUBSTRATE WITH HIGH RESISTIVITY AND METHOD OF MANUFACTURING THE SAME (STMicroelectronics International N.V.)
- 18938549. SiC EPITAXIAL WAFER (Resonac Corporation)
- 18938613. SiC EPITAXIAL WAFER (Resonac Corporation)
- 18938677. SiC EPITAXIAL WAFER (Resonac Corporation)
- 18987002. SiC EPITAXIAL WAFER (Resonac Corporation)
- 18989246. SIC SUBSTRATE AND SIC COMPOSITE SUBSTRATE (NGK INSULATORS, LTD.)
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- Stmicroelectronics international n.v. (20250105004). POLYCRYSTALLINE SILICON CARBIDE (SIC) SUBSTRATE WITH HIGH RESISTIVITY AND METHOD OF MANUFACTURING THE SAME
- STMicroelectronics International N.V. patent applications on March 27th, 2025
- STMicroelectronics International N.V. patent applications on March 6th, 2025
- Sumitomo electric industries, ltd. (20240301585). SILICON CARBIDE EPITAXIAL SUBSTRATE simplified abstract
- Sumitomo electric industries, ltd. (20240304676). SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract
- Sumitomo Electric Industries, Ltd. patent applications on September 12th, 2024