18938613. SiC EPITAXIAL WAFER (Resonac Corporation)

SiC EPITAXIAL WAFER

Organization Name

Resonac Corporation

Inventor(s)

Yoshikazu Umeta of Tokyo JP

Marie Ohuchi of Tokyo JP

SiC EPITAXIAL WAFER

This abstract first appeared for US patent application 18938613 titled 'SiC EPITAXIAL WAFER

Original Abstract Submitted

An objective of the present invention is to provide a SiC epitaxial wafer with a large diameter, a low triangular defect density, and high carrier concentration uniformity. According to the present invention, a SiC epitaxial wafer includes a SiC substrate and a SiC epitaxial layer. The SiC substrate has a diameter of 195 mm or more. The SiC epitaxial layer has a triangular defect density of 0.2 pieces/cmor less and a carrier concentration variation of 20% or less.