18987002. SiC EPITAXIAL WAFER (Resonac Corporation)
SiC EPITAXIAL WAFER
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Inventor(s)
SiC EPITAXIAL WAFER
This abstract first appeared for US patent application 18987002 titled 'SiC EPITAXIAL WAFER
Original Abstract Submitted
A SiC epitaxial wafer including: a SiC substrate; and a SiC epitaxial layer stacked on one surface of the SiC substrate, wherein a diameter of the SiC substrate is 195 mm or more, and a warp is 50 μm or less.