18833358. SILICON CARBIDE EPITAXIAL SUBSTRATE (Sumitomo Electric Industries, Ltd.)
SILICON CARBIDE EPITAXIAL SUBSTRATE
Organization Name
Sumitomo Electric Industries, Ltd.
Inventor(s)
SILICON CARBIDE EPITAXIAL SUBSTRATE
This abstract first appeared for US patent application 18833358 titled 'SILICON CARBIDE EPITAXIAL SUBSTRATE
Original Abstract Submitted
A silicon carbide epitaxial substrate includes a silicon carbide substrate and a silicon carbide epitaxial layer. The silicon carbide substrate has a first main surface. The silicon carbide epitaxial layer is provided on the first main surface. The silicon carbide epitaxial layer has one or more blue light-emitting defects. The silicon carbide epitaxial layer has a second main surface. The second main surface is located opposite to an interface between the silicon carbide substrate and the silicon carbide epitaxial layer. The one or more blue light-emitting defects are exposed at the second main surface. When an area density of one or more threading screw dislocations in the first main surface is a first area density, an area density of one or more threading edge dislocations in the first main surface is a second area density, and an area density of the one or more blue light-emitting defects in the second main surface is a third area density, a ratio of the third area density to a sum of the first area density and the second area density is 0.03% or less.