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Category:C30B25/18
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This category has the following 10 subcategories, out of 10 total.
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Pages in category "C30B25/18"
The following 30 pages are in this category, out of 30 total.
1
- 18086380. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND APPARATUS EMPLOYING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18264202. NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR DEVICE simplified abstract (Panasonic Intellectual Property Management Co., Ltd.)
- 18271447. SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (Sumitomo Electric Industries, Ltd.)
- 18273774. SILICON CARBIDE EPITAXIAL SUBSTRATE simplified abstract (Sumitomo Electric Industries, Ltd.)
- 18278795. SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARATUS FOR MANUFACTURING THE SAME, AND TEMPLATE SUBSTRATE simplified abstract (KYOCERA Corporation)
- 18287939. LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING LAMINATED STRUCTURE simplified abstract (Shin-Etsu Chemical Co., Ltd.)
- 18398995. METHOD, SYSTEM AND APPARATUS FOR FORMING EPITAXIAL TEMPLATE LAYER simplified abstract (ASM IP Holding B.V.)
- 18457324. METHODS, ALGORITHMS AND SYSTEMS FOR SUB-NANOSECOND DIGITAL SIGNAL PROCESSING OF PHOTOMULTIPLIER TUBE RESPONSE TO ENABLE MULTI-PHOTON COUNTING IN RAMAN SPECTROSCOPY simplified abstract (Purdue Research Foundation)
- 18538267. INNER SPACER LINER FOR GATE-ALL-AROUND DEVICE simplified abstract (Applied Materials, Inc.)
- 18567210. DIAMOND SUBSTRATE AND METHOD FOR MANUFACTURING SAME simplified abstract (Shin-Etsu Chemical Co., Ltd.)
- 18667515. METHOD AND APPARATUS FOR PRECLEANING A SUBSTRATE SURFACE PRIOR TO EPITAXIAL GROWTH simplified abstract (Applied Materials, Inc.)
- 18724824. HIGH-CHARACTERISTIC EPITAXIAL GROWTH SUBSTRATE AND METHOD FOR MANUFACTURING SAME (SHIN-ETSU CHEMICAL CO., LTD.)
- 18758611. SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREOF AND MANUFACTURING APPARATUS (ROHM CO., LTD.)
- 18894828. SUBSTRATE WITH ß-GALLIUM OXIDE FILM AND PRODUCTION METHOD THEREFOR (AGC Inc.)
- 18954712. APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS WITH SELECTIVE EPITAXIAL DEPOSITION (Applied Materials, Inc.)
- 18966261. GAS-PHASE REACTOR SYSTEM-WITH A REACTION CHAMBER, A SOLID PRECURSOR SOURCE VESSEL, A GAS DISTRIBUTION SYSTEM, AND A FLANGE ASSEMBLY (ASM IP Holding B.V.)
A
- Applied materials, inc. (20240301584). METHOD AND APPARATUS FOR PRECLEANING A SUBSTRATE SURFACE PRIOR TO EPITAXIAL GROWTH simplified abstract
- Applied materials, inc. (20250087485). APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS WITH SELECTIVE EPITAXIAL DEPOSITION
- Applied Materials, Inc. patent applications on March 13th, 2025
- Applied Materials, Inc. patent applications on September 12th, 2024
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R
S
- STMicroelectronics International N.V. patent applications on March 6th, 2025
- Sumitomo electric industries, ltd. (20240301585). SILICON CARBIDE EPITAXIAL SUBSTRATE simplified abstract
- Sumitomo electric industries, ltd. (20240304676). SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract
- Sumitomo Electric Industries, Ltd. patent applications on September 12th, 2024