Patent Applications by ROHM CO., LTD. on January 9th, 2025

ROHM CO., LTD.: 30 patent applications

ROHM CO., LTD. has applied for patents in the areas of H01L29/06 (5), H01L29/78 (5), H01L29/40 (4), H01L29/417 (4), H01L29/66 (3) H02M1/08 (3), H01L29/41766 (2), H03K17/6871 (2), H01L29/7813 (2), H01L29/7397 (1)

With keywords such as: layer, surface, electrode, element, semiconductor, current, device, portion, switching, and gate in patent application abstracts.

Patent Applications by ROHM CO., LTD.

20250011159. ACCELERATION SENSOR_simplified_abstract_(rohm co., ltd.)

Inventor(s): Martin Wilfried HELLER of Kyoto-shi (JP) for rohm co., ltd., Toma FUJITA of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): B81B3/00, G01P15/125

CPC Code(s): B81B3/0086

Abstract: an acceleration sensor includes a device-side substrate having a first main surface and a second main surface facing the first main surface, a recessed portion recessed from the first main surface toward the second main surface side, a mems electrode that is provided in the recessed portion, includes a fixed electrode having a first fixed electrode and a second fixed electrode electrically insulated from the first fixed electrode, and a movable electrode having a first movable electrode and a second movable electrode electrically insulated from the first movable electrode, and constitutes a differential circuit, and an isolation joint that mechanically connects the first movable electrode and the second movable electrode while electrically insulating the first movable electrode and the second movable electrode.

20250012756. SENSOR SYSTEM_simplified_abstract_(rohm co., ltd.)

Inventor(s): Shunsuke AKASAKA of Kyoto shi (JP) for rohm co., ltd., Koji TERUMOTO of Kyoto shi (JP) for rohm co., ltd.

IPC Code(s): G01N27/409, G01N27/407, G01N27/416

CPC Code(s): G01N27/409

Abstract: a sensor system includes a sensor of a limiting current type that detects an oxygen concentration, and a control device. the control device includes a storage that stores a calibration curve indicating relation between a voltage applied to the sensor and an oxygen ion current, the relation being changed according to the oxygen concentration. the control device is configured to measure the oxygen concentration by applying, to the sensor, a voltage based on the calibration curve and a detection value obtained by performing application of a voltage to the sensor.

20250013280. POWER SUPPLY MANAGEMENT CIRCUIT_simplified_abstract_(rohm co., ltd.)

Inventor(s): Leijie ZHOU of Kyoto-shi (JP) for rohm co., ltd., Hirofumi INADA of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): G06F1/26

CPC Code(s): G06F1/26

Abstract: a pmic controls multiple power supply circuits. nonvolatile memory supports repeated writing and has multiple pages. a memory control circuit selects one from among the multiple pages of the nonvolatile memory and writes internal data that indicates an internal state of the power supply management circuit to the write target page. the memory control circuit selects an already-erased page as the write target page and writes the internal data to it, and erases pages other than the write target page.

20250014667. MEMORY CIRCUIT_simplified_abstract_(rohm co., ltd.)

Inventor(s): Daigo FUJIMURA of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): G11C29/46, G11C29/12

CPC Code(s): G11C29/46

Abstract: a memory circuit includes a first switch provided for each pair of first and second bit lines and connected to a first and a second memory cell, a first all bit line selection circuit that, if an input test signal indicates a test, can turn on all the first switches regardless of the bit data of an input switch control signal, and a sensing circuit that can sense the magnitude relationship between the sum of currents flowing through the first bit lines and a reference current and the magnitude relationship between the sum of currents flowing through the second bit lines and the reference current. the gate of a first memory transistor and the gate of a second memory transistor can be fed with a direct-current voltage.

20250014787. SHUNT RESISTOR AND METHOD OF MANUFACTURING SHUNT RESISTOR_simplified_abstract_(rohm co., ltd.)

Inventor(s): Kentaro NAKA of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01C1/148, H01C7/13, H01C17/245

CPC Code(s): H01C1/148

Abstract: a shunt resistor includes: a resistive element; and a first terminal portion and a second terminal portion. the resistive element has a first end and a second end in a second direction orthogonal to a first direction that is a thickness direction of the resistive element, the second end being an end opposite to the first end, and the resistive element has a third end and a fourth end in a third direction orthogonal to the first direction and the second direction, the fourth end being an end opposite to the third end. the first terminal portion and the second terminal portion are joined to the first end and the second end, respectively.

20250014799. INSULATING CHIP AND SIGNAL TRANSMISSION DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Bungo TANAKA of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01F17/00, H01F27/32, H01F38/14, H01L23/64

CPC Code(s): H01F17/0013

Abstract: an insulating chip includes: a first unit; and a second unit disposed on the first unit, wherein the first unit includes a first element insulation layer including a first element back surface and a first element head surface, a first insulation element embedded in the first element insulation layer, and a first connection electrode exposed from the first element back surface, the second unit includes a second element insulation layer including a second element back surface and a second element head surface, a second insulation element opposed to the first insulation element, and a second connection electrode exposed from the second element back surface, the first unit and the second unit are disposed so that the first element back surface is in contact with the second element back surface and the first connection electrode is electrically connected to the second connection electrode.

20250014816. METHOD FOR MANUFACTURING ELECTRONIC COMPONENT_simplified_abstract_(rohm co., ltd.)

Inventor(s): Ryuya AOKI of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01F41/06, H01F41/12

CPC Code(s): H01F41/06

Abstract: a method for manufacturing an electronic component includes a substrate preparation process including preparing an insulative substrate, an insulation layer formation process including forming an insulation layer on the substrate, a penetration process including forming a through-hole penetrating through the insulation layer, and a wiring process forming a through-wiring in the through-hole. the through-wiring constitutes at least a part of a coil unit wound in a solenoid form. the method may further include, before the insulation layer formation process, a first metal layer formation process including forming a first metal layer on the substrate. the through-wiring is continuous with the first metal layer, and the coil unit includes the first metal layer.

20250014897. SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREOF AND MANUFACTURING APPARATUS_simplified_abstract_(rohm co., ltd.)

Inventor(s): Makoto TAKAMURA of Kyoto (JP) for rohm co., ltd., Takayasu OKA of Kyoto (JP) for rohm co., ltd.

IPC Code(s): H01L21/02, C30B25/10, C30B25/18, H01L21/265, H01L29/16

CPC Code(s): H01L21/02529

Abstract: the present disclosure provides a method of manufacturing a semiconductor substrate. the method includes: forming a graphene layer on a silicon plane of a silicon carbide monocrystalline substrate; forming a sic epitaxial growth layer on the graphene layer; forming a stress layer on the sic epitaxial growth layer; attaching a temporary substrate onto the stress layer; peeling off the graphene layer from the sic epitaxial growth layer; forming a sic polycrystalline growth layer on a carbon plane of the sic epitaxial growth layer from which the graphene layer has been peeled off; and removing the temporary substrate. at least one of the forming of the graphene layer and the forming of the sic epitaxial growth layer is under an atmosphere including fluorine.

20250014992. ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING THE SAME_simplified_abstract_(rohm co., ltd.)

Inventor(s): Kazumasa NISHIO of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L23/522, H01L21/768, H01L23/528

CPC Code(s): H01L23/5228

Abstract: an electronic component includes a semiconductor layer that has a first principal surface and a second principal surface at an opposite thereto, a lower insulating layer that is formed on the first principal surface of the semiconductor layer, a resistance layer that is formed on the lower insulating layer and has a notched portion extending in a predetermined first direction from a portion of a peripheral edge thereof, an upper insulating layer that is formed on the lower insulating layer such as to cover the resistance layer, and an uneven structure that is formed in a predetermined region of the first principal surface of the semiconductor layer including at least a region directly below the resistance layer and the uneven structure includes a plurality of grooves disposed at equal intervals in a second direction that is a direction along the first principal surface and is orthogonal to the first direction and extend in parallel to the first direction and a projection portion that is a portion between two adjacent grooves.

20250015075. SEMICONDUCTOR APPARATUS_simplified_abstract_(rohm co., ltd.)

Inventor(s): Kenichi YOSHIMURA of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L27/02

CPC Code(s): H01L27/0274

Abstract: a semiconductor device includes: first switching elements arranged in a first direction and each including a first gate wire extending in a second direction; and a back gate guard ring surrounding the first switching elements. the first switching elements are connected to each other in parallel and connected between a first pad and a second pad. the first switching elements include a driver switching element, the driver switching element being at least one first switching element located between two first end switching elements located at opposite ends of the first switching elements in the first direction. the first switching elements excluding the driver switching element include a first protection switching element, the first gate wire of the first protection switching element being connected to the first pad or the second pad.

20250015078. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Seigo MORI of Kyoto-shi (JP) for rohm co., ltd., Yuki NAKANO of Kyoto-shi (JP) for rohm co., ltd., Keigo MINODE of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L27/06, H01L29/417, H01L29/78

CPC Code(s): H01L27/0629

Abstract: a semiconductor device includes a chip that has a main surface, a gate resistor that includes a trench resistor structure formed in the main surface, a gate pad that has a lower resistance value than the trench resistor structure and is arranged on the main surface such as to be electrically connected to the trench resistor structure, and a gate wiring that has a lower resistance value than the trench resistor structure and is arranged on the main surface such as to be electrically connected to the gate pad via the trench resistor structure.

20250015136. NITRIDE SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Ryoichi MAKINO of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L29/10, H01L29/423, H01L29/778, H01L29/20, H01L29/40

CPC Code(s): H01L29/1066

Abstract: a nitride semiconductor device includes an electron transit layer, an electron supply layer disposed on the electron transit layer to generate two-dimensional electron gas in the electron transit layer, a gate layer containing acceptor impurities and disposed on the electron supply layer, a gate electrode contacting the gate layer, a source electrode, and a drain electrode. the gate layer includes a trench that is recessed from an upper surface of the gate layer in a region contacting the gate electrode. the trench includes a trench open end, a trench bottom surface, and a curved surface continuous with the trench bottom surface and curved from the trench bottom surface toward the trench open end.

20250015151. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Masaki NAGATA of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L29/417, H01L29/06, H01L29/40, H01L29/423, H01L29/66, H01L29/78

CPC Code(s): H01L29/41766

Abstract: a semiconductor device includes a semiconductor layer including a first surface and a second surface opposite to the first surface; a source trench formed in the semiconductor layer and including a side wall that is continuous with the second surface; an insulation layer formed on the second surface of the semiconductor layer; an embedded electrode arranged in the source trench and insulated from the side wall of the source trench by the insulation layer; a source interconnection formed on the insulation layer; and a source contact plug electrically connecting the source interconnection to the semiconductor layer. the source contact plug contacts the embedded electrode, and the source contact plug contacts the semiconductor layer via a part of the side wall of the source trench.

20250015152. NITRIDE SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Manabu YANAGIHARA of Kyoto-shi (JP) for rohm co., ltd., Kazuya NAGASE of Kyoto-shi (JP) for rohm co., ltd., Shinya TAKADO of Kyoto-shi (JP) for rohm co., ltd., Hirotaka OTAKE of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L29/417, H01L21/285, H01L29/20, H01L29/40, H01L29/45, H01L29/66, H01L29/778

CPC Code(s): H01L29/41766

Abstract: a nitride semiconductor device includes: an electron transit layer; an electron supply layer that is formed on the electron transit layer and that has a band gap which is larger than that of the electron transit layer; a dielectric layer that is formed on the electron supply layer; and an electrode that has a contact part which is in electrical contact with the electron supply layer via at least an opening passing through the dielectric layer. the contact part has: an inclined surface that is inclined so as to decrease in width toward the electron transit layer; a tip surface that is in contact with the bottom face of the opening; and a curved surface that is provided between the tip surface and the inclined surface and that is curved so as to protrude toward the electron transit layer.

20250015171. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Masaki AONO of Kyoto (JP) for rohm co., ltd., Atsushi NOCHIDA of Kyoto (JP) for rohm co., ltd.

IPC Code(s): H01L29/739, H01L27/07, H01L29/06, H01L29/10, H01L29/16, H01L29/861

CPC Code(s): H01L29/7397

Abstract: the semiconductor device includes a chip which has a first surface on one side and a second surface on the other side, a plurality of igbt regions which are provided at an interval in the chip, a boundary region which is provided in a region between the plurality of igbt regions in the chip, a first conductivity type cathode region which is formed in a surface layer portion of the second surface in the boundary region, and a second conductivity type well region which is formed in a surface layer portion of the first surface in the boundary region.

20250015176. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Masaki NAGATA of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L29/78, H01L29/06, H01L29/40

CPC Code(s): H01L29/7813

Abstract: a semiconductor device includes a semiconductor layer; a trench formed in the semiconductor layer and including a side wall, an insulation layer formed on the semiconductor layer; and a gate electrode arranged in the trench. the insulation layer includes a gate insulation portion located between the semiconductor layer and the gate electrode, and covering the side wall of the trench. the gate electrode includes a first conductive portion contacting the gate insulation portion, and a second conductive portion including a side surface contacting the first conductive portion. the first conductive portion is formed from polysilicon, and the second conductive portion is formed from metal.

20250015177. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Yuki NAKANO of Kyoto (JP) for rohm co., ltd.

IPC Code(s): H01L29/78, H01L29/06, H01L29/10, H01L29/872

CPC Code(s): H01L29/7813

Abstract: a semiconductor device includes a chip having a first main surface which serves as a device surface and a second main surface which serves as a non-device surface, and a first conductivity type drift gradient region formed in the chip, and having a concentration profile in which an impurity concentration of an end portion on the first main surface side is lower than an impurity concentration of an end portion on the second main surface side.

20250015178. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Akihiro HIKASA of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L29/78, H01L29/06, H01L29/417, H01L29/423, H01L29/861

CPC Code(s): H01L29/7815

Abstract: the semiconductor device includes a semiconductor layer which has a main surface, a switching device which is formed in the semiconductor layer, a first electrode which is arranged on the main surface and electrically connected to the switching device, a second electrode which is arranged on the main surface at an interval from the first electrode and electrically connected to the switching device, a first terminal electrode which has a portion that overlaps the first electrode in plan view and a portion that overlaps the second electrode and is electrically connected to the first electrode, and a second terminal electrode which has a portion that overlaps the second electrode in plan view and is electrically connected to the second electrode.

20250015202. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Mitsuhide KORI of Kyoto (JP) for rohm co., ltd.

IPC Code(s): H01L29/872, H01L29/49, H01L29/66

CPC Code(s): H01L29/872

Abstract: a semiconductor device includes a chip having a principal surface, a pn-junction portion extending in a horizontal direction along the principal surface inside the chip, a trench insulating structure formed in the principal surface such that the trench insulating structure penetrates through the pn-junction portion, and demarcating a diode region in the chip, a barrier forming region formed in a surface layer portion of the principal surface in the diode region, and a metal layer located on the principal surface such that the metal layer covers the barrier forming region in the diode region, and forming a schottky-junction portion with the barrier forming region.

20250015704. DRIVING DEVICE, SWITCHING POWER SUPPLY APPARATUS, AND VEHICLE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Takumi FUJIMAKI of Kyoto (JP) for rohm co., ltd., Yuta SHIROISHI of Kyoto (JP) for rohm co., ltd., Satoru NATE of Kyoto (JP) for rohm co., ltd.

IPC Code(s): H02M1/08, B60R16/03, H02M1/00, H02M1/44, H02M3/335

CPC Code(s): H02M1/08

Abstract: a driving device is configured to drive a switching clement. the driving device includes a variation unit configured to vary a current supply capability with respect to a control terminal of the switching clement during a period from startup to shutdown of the driving device.

20250015705. DRIVING DEVICE, SWITCHING POWER SUPPLY DEVICE, AND ELECTRICAL APPLIANCE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Takumi FUJIMAKI of Kyoto (JP) for rohm co., ltd., Yifei TANG of Kyoto (JP) for rohm co., ltd.

IPC Code(s): H02M1/08, H02M3/335

CPC Code(s): H02M1/08

Abstract: a driving device is configured to drive a switching element. the driving device includes a pull-down circuit connected to the control terminal of the switching element. the pull-down circuit is configured to keep a first pull-down current, which flows through the pull-down circuit before the driving device starts up, higher than a second pull-down current, which flows through the pull-down circuit after the driving device starts up.

20250015706. GATE DRIVING DEVICE AND POWER CONVERTER_simplified_abstract_(rohm co., ltd.)

Inventor(s): Takaharu ISHIBASHI of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H02M1/08, H02M1/00, H03K17/16

CPC Code(s): H02M1/08

Abstract: a gate driving device comprises: a gate driving unit that outputs power for switching between on and off of a semiconductor switching element; a speed control unit that controls at least one of a turn-on speed and a turn-off speed of the semiconductor switching element; and a speed switching unit that switches at least one of the turn-on speed and the turn-off speed in response to an instruction from the speed control unit. the speed switching unit includes: a plurality of impedance elements (gate resistors, for example); and switches that control power output from the gate driving unit and to pass through corresponding ones of the plurality of impedance elements. the speed control unit controls the switches on the basis of an output current flowing in the semiconductor switching element.

20250015735. SEMICONDUCTOR DEVICE, MOTOR SYSTEM, AND VEHICLE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Kazuma SHIOMI of Kyoto-shi (JP) for rohm co., ltd., Yasuhito SUGIMOTO of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H02P6/14, G05F1/46, G05F3/24, H02P27/04

CPC Code(s): H02P6/14

Abstract: a semiconductor device comprises: an upper control input terminal; a lower control input terminal; a power supply terminal; a control logic unit; a reference power supply circuit configured to receive supply of the power supply voltage and to allow generation of a reference power supply voltage to be supplied to the control logic unit; and a switch circuit including switches provided for the upper control input signal and the lower control input signal respectively and switched between on and off in response to logic levels of the upper control input signal and the lower control input signal respectively. the reference power supply circuit is configured to be activated on the basis of a combination of the logic levels of the upper control input signal and the lower control input signal.

20250015770. AUDIO AMPLIFIER CIRCUIT_simplified_abstract_(rohm co., ltd.)

Inventor(s): Mitsuteru SAKAI of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H03F3/217, H03F1/02, H03F1/52, H03F3/213

CPC Code(s): H03F3/2171

Abstract: in an audio amplifier circuit, a power supply terminal receives a power supply voltage. a voltage source generates an internal power supply voltage obtained by multiplying the power supply voltage by a first gain and a bias voltage obtained by multiplying the power supply voltage by a second gain. an input gain circuit amplifies an analog audio signal with reference to the bias voltage. the input gain circuit has an input stage and a gain stage. a phase compensation capacitor is connected to the gain stage. a withstand voltage protection circuit clamps an output voltage of the gain stage to a predetermined clamp voltage.

20250015787. PULSE DRIVE CIRCUIT AND SIGNAL TRANSMISSION DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Sho TANAKA of Kyoto (JP) for rohm co., ltd., Shimpei KITERA of Kyoto (JP) for rohm co., ltd., Hiroki TSUKAMOTO of Kyoto (JP) for rohm co., ltd.

IPC Code(s): H03K5/04, H04L25/03

CPC Code(s): H03K5/04

Abstract: a pulse drive circuit includes: a buffer configured to receive a transmission pulse signal; a capacitor configured to be provided between the output terminal of the buffer and the primary coil of a transformer; and a first diode configured to be provided between the primary coil of the transformer and a reference potential terminal.

20250015798. GATE DRIVER CIRCUIT_simplified_abstract_(rohm co., ltd.)

Inventor(s): Hisashi SUGIE of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H03K17/687, H02P27/00

CPC Code(s): H03K17/6871

Abstract: a turn-on circuit is configured to supply a current as a source to the gate of a high-side transistor. a first current source supplies an output current that is switchable between a first current amount and a second current amount that is smaller than the first current amount. a first switch is coupled between a first output node of a first current mirror circuit and the gate of the high-side transistor. a second current source generates a second current. a second switch is coupled between a first output node of a second current mirror circuit and the gate of the high-side transistor.

20250015799. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Yasuhito SUGIMOTO of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H03K17/687, G06F11/07, G11C7/10

CPC Code(s): H03K17/6871

Abstract: a control circuit provided in a semiconductor device receives an input data signal during a selection period in which a selection signal has a predetermined level in synchronization with a clock signal and performs a corresponding operation corresponding to the input data signal during the selection period or after the selection period. the control circuit holds an error flag indicating whether a specific error has occurred, outputs, during a part of the selection period, a response signal corresponding to the input data signal from a data output terminal and outputs, during another part of the selection period, an error flag signal corresponding to the value of the error flag from the data output terminal.

20250016023. SEMICONDUCTOR DEVICE AND COMMUNICATION SYSTEM_simplified_abstract_(rohm co., ltd.)

Inventor(s): Kei Nagao of Kyoto (JP) for rohm co., ltd.

IPC Code(s): H04L12/40, G06F13/16

CPC Code(s): H04L12/40013

Abstract: a semiconductor device includes: an interface configured to receive write data transmitted via serial communication from outside; a register configured to store setting data corresponding to multiple channels; and an update controller configured to update the setting data based on the write data, wherein the write data includes first data in which each bit indicates whether or not there is data update in a channel of the multiple channels that corresponds to the each bit; and second data for data update in each of the multiple channels, that is set as having the data update by the first data.

20250016896. SEMICONDUCTOR DEVICE AND MODULE_simplified_abstract_(rohm co., ltd.)

Inventor(s): AKIRA AOKI of KYOTO (JP) for rohm co., ltd.

IPC Code(s): H05B45/14

CPC Code(s): H05B45/14

Abstract: a semiconductor device includes: a current sense circuit that generates a current sense signal corresponding to a monitoring target current; an error amplifier; a comparator; and a controller. the current sense circuit includes: a differential amplifier of a current output type; a first input resistor connected between a first input terminal of the differential amplifier and a first current sense terminal; a second input resistor connected between a second input terminal of the differential amplifier and a second current sense terminal; an output resistor configured to be connected to the output terminal of the differential amplifier; a first feedback current path across which a first feedback current is passed between the first input terminal and the output terminal of the differential amplifier; and a second feedback current path across which a second feedback current is passed between the second input terminal of the differential amplifier and the output terminal.

20250016898. LIGHT-EMITTING ELEMENT DRIVING DEVICE, LIGHT-EMITTING DEVICE, AND VEHICLE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Ryo TAKAGI of Kyoto (JP) for rohm co., ltd., Akira AOKI of Kyoto (JP) for rohm co., ltd.

IPC Code(s): H05B45/325, H05B45/10

CPC Code(s): H05B45/325

Abstract: a light-emitting element driving device includes an error amplifier configured to output a voltage corresponding to the difference between a voltage corresponding to the current flowing through a light-emitting element and a reference voltage, and to switch between an operating state and a non-operating state according to a control signal; a driver configured to drive, based on the output voltage of the error amplifier, a switching element in a voltage feeder configured to feed a voltage to the light-emitting element; and a suppressor configured, when the error amplifier switches from the non-operating state to the operating state, to suppress a rise in the output voltage of the error amplifier.

ROHM CO., LTD. patent applications on January 9th, 2025