SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREOF AND MANUFACTURING APPARATUS

Organization Name

Inventor(s)

SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREOF AND MANUFACTURING APPARATUS

This abstract first appeared for US patent application 20250014897 titled 'SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREOF AND MANUFACTURING APPARATUS

Original Abstract Submitted

the present disclosure provides a method of manufacturing a semiconductor substrate. the method includes: forming a graphene layer on a silicon plane of a silicon carbide monocrystalline substrate; forming a sic epitaxial growth layer on the graphene layer; forming a stress layer on the sic epitaxial growth layer; attaching a temporary substrate onto the stress layer; peeling off the graphene layer from the sic epitaxial growth layer; forming a sic polycrystalline growth layer on a carbon plane of the sic epitaxial growth layer from which the graphene layer has been peeled off; and removing the temporary substrate. at least one of the forming of the graphene layer and the forming of the sic epitaxial growth layer is under an atmosphere including fluorine.