18898926. GaN CRYSTAL AND GaN WAFER (Mitsubishi Chemical Corporation)
GaN CRYSTAL AND GaN WAFER
Organization Name
Mitsubishi Chemical Corporation
Inventor(s)
GaN CRYSTAL AND GaN WAFER
This abstract first appeared for US patent application 18898926 titled 'GaN CRYSTAL AND GaN WAFER
Original Abstract Submitted
A GaN crystal with an angle between the normal line of a main surface and an m-axis of 0 degrees or more and 20 degrees or less is provided, in which the GaN crystal having, on the main surface thereof, a band-shaped dislocation-concentrated region that satisfies at least one requirement selected from the group consisting of (1) to (3) and a GaN wafer with a narrow width of the band-shaped dislocation-concentrated region present on the main surface and contribution to an improvement in the yield of a nitride semiconductor device: