Category:Minwoo Jang of Portland OR US
Minwoo Jang
Minwoo Jang from Portland OR US has applied for patents in technology areas such as H01L29/45, H01L21/285, H01L23/522 with intel corporation.
Patents
Pages in category "Minwoo Jang of Portland OR US"
The following 15 pages are in this category, out of 15 total.
1
- 18372506. INTEGRATED CIRCUIT STRUCTURES HAVING REDUCED LOCAL LAYOUT EFFECTS (Intel Corporation)
- 18374607. MULTIPLE VOLTAGE THRESHOLD INTEGRATED CIRCUIT STRUCTURE WITH LOCAL LAYOUT EFFECT TUNING (INTEL CORPORATION)
- 18374929. NBTI REDUCTION AND RELIABILITY IMPROVEMENT FOR SELECTIVE LAYOUTS (INTEL CORPORATION)
- 18375084. INTEGRATED CIRCUIT STRUCTURE WITH DEEP VIA BAR WIDTH TUNING (INTEL CORPORATION)
- 18467859. MITIGATING PROXIMITY EFFECTS OF DEEP TRENCH VIAS (Intel Corporation)
- 18498340. INTEGRATED CIRCUIT DEVICES WITH BACKSIDE SEMICONDUCTOR STRUCTURES (Intel Corporation)
I
- Intel corporation (20250006579). MITIGATION OF THRESHOLD VOLTAGE SHIFT IN BACKSIDE POWER DELIVERY USING BACKSIDE PASSIVATION LAYER
- Intel corporation (20250006734). PERFORMANCE OPTIMIZATION OF TRANSISTORS SHARING CHANNEL STRUCTURES OF VARYING WIDTH
- Intel corporation (20250098249). MITIGATING PROXIMITY EFFECTS OF DEEP TRENCH VIAS
- Intel corporation (20250107175). INTEGRATED CIRCUIT STRUCTURES HAVING REDUCED LOCAL LAYOUT EFFECTS
- Intel corporation (20250112120). INTEGRATED CIRCUIT STRUCTURE WITH DEEP VIA BAR WIDTH TUNING
- Intel corporation (20250113586). NBTI REDUCTION AND RELIABILITY IMPROVEMENT FOR SELECTIVE LAYOUTS
- Intel corporation (20250113595). MULTIPLE VOLTAGE THRESHOLD INTEGRATED CIRCUIT STRUCTURE WITH LOCAL LAYOUT EFFECT TUNING
- Intel corporation (20250140649). INTEGRATED CIRCUIT DEVICES WITH BACKSIDE SEMICONDUCTOR STRUCTURES