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18498340. INTEGRATED CIRCUIT DEVICES WITH BACKSIDE SEMICONDUCTOR STRUCTURES (Intel Corporation)

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INTEGRATED CIRCUIT DEVICES WITH BACKSIDE SEMICONDUCTOR STRUCTURES

Organization Name

Intel Corporation

Inventor(s)

Feng Zhang of Hillsboro OR US

Tao Chu of Portland OR US

Minwoo Jang of Portland OR US

Yanbin Luo of Portland OR US

Guowei Xu of Portland OR US

Ting-Hsiang Hung of Beaverton OR US

Chiao-Ti Huang of Portland OR US

Robin Chao of Portland OR US

Chia-Ching Lin of Portland OR US

Yang Zhang of Rio Rancho NM US

Kan Zhang of HILLSBORO OR US

INTEGRATED CIRCUIT DEVICES WITH BACKSIDE SEMICONDUCTOR STRUCTURES

This abstract first appeared for US patent application 18498340 titled 'INTEGRATED CIRCUIT DEVICES WITH BACKSIDE SEMICONDUCTOR STRUCTURES

Original Abstract Submitted

An IC device may include a semiconductor structure and a backside semiconductor structure over the semiconductor structure. The semiconductor structure and backside semiconductor structure may constitute the source or drain region of a transistor. The backside semiconductor structure may be closer to the backside of a substrate of the IC device than the semiconductor structure. The backside semiconductor structure may be formed at a lower temperature than the semiconductor structure. The backside semiconductor structure may have one or more different materials from the semiconductor structure. For instance, a semiconductor material in the backside semiconductor structure may have a different crystal direction from a semiconductor material in the semiconductor structure. As another example, the backside semiconductor structure may have one or more different chemical compounds from the semiconductor structure. The backside semiconductor structure may be over a backside via that can couple the backside semiconductor structure to a backside metal layer.

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