Category:Julien Frougier of Albany NY (US)
Julien Frougier of Albany NY (US)
Executive Summary
Julien Frougier of Albany NY (US) is an inventor who has filed 15 patents. Their primary areas of innovation include SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (9 patents), SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (9 patents), SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (8 patents), and they have worked with companies such as International Business Machines Corporation (10 patents), INTERNATIONAL BUSINESS MACHINES CORPORATION (5 patents). Their most frequent collaborators include (14 collaborations), (9 collaborations), (4 collaborations).
Patent Filing Activity
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Technology Areas
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List of Technology Areas
- H01L29/42392 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 9 patents
- H01L29/775 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 9 patents
- H01L29/0673 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 8 patents
- H01L21/823807 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 5 patents
- H01L29/66439 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 5 patents
- H01L29/78696 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 4 patents
- H01L27/092 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 4 patents
- H01L27/088 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 3 patents
- H10D30/43 (No explanation available): 3 patents
- H10D30/014 (No explanation available): 3 patents
- H10D30/6735 (No explanation available): 3 patents
- H10D62/121 (No explanation available): 3 patents
- H10B10/125 (ELECTRONIC MEMORY DEVICES): 2 patents
- H01L27/0922 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
- H01L21/8221 ({Three dimensional integrated circuits stacked in different levels}): 2 patents
- H10D62/151 (No explanation available): 2 patents
- H10D64/017 (No explanation available): 2 patents
- H01L21/823481 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 2 patents
- H01L29/41733 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L21/28123 ({Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects}): 1 patents
- H01L27/1207 ({combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits}): 1 patents
- H01L21/823462 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
- H01L21/823468 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
- H01L21/84 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L21/76229 (Dielectric regions {, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers}): 1 patents
- H01L21/76843 ({formed in openings in a dielectric}): 1 patents
- H01L21/823878 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
- H01L29/66977 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L29/0847 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H10B10/12 (ELECTRONIC MEMORY DEVICES): 1 patents
- H01L21/823871 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
- H01L21/823885 ({with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface (with a current flow parallel to the substrate surface): 1 patents
- H01L29/66666 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L29/7827 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L21/823864 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
- H01L29/66545 ({using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate}): 1 patents
- H01L29/66553 ({using self aligned silicidation, i.e. salicide (formation of conductive layers comprising silicides): 1 patents
- H01L21/823412 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
- H01L23/5286 ({Geometry or} layout of the interconnection structure {(): 1 patents
- H10D30/6729 (No explanation available): 1 patents
- H10D64/01 (No explanation available): 1 patents
- H01L29/41766 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L21/76224 ({using trench refilling with dielectric materials (trench filling with polycristalline silicon): 1 patents
- H01L21/823475 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
- H01L29/0669 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H10D30/6757 (No explanation available): 1 patents
- H10D64/021 (No explanation available): 1 patents
- H10D84/0128 (No explanation available): 1 patents
- H10D84/013 (No explanation available): 1 patents
- H10D84/038 (No explanation available): 1 patents
- H10D84/83 (No explanation available): 1 patents
Companies
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List of Companies
- International Business Machines Corporation: 10 patents
- INTERNATIONAL BUSINESS MACHINES CORPORATION: 5 patents
Collaborators
- Ruilong Xie of Niskayuna NY (US) (14 collaborations)
- Min Gyu Sung of Latham NY (US) (9 collaborations)
- Juntao Li of Cohoes NY (US) (4 collaborations)
- Chanro Park of Clifton Park NY (US) (4 collaborations)
- Tao Li of Slingerlands NY (US) (4 collaborations)
- Shay Reboh of Guilderland NY (US) (3 collaborations)
- Tenko Yamashita of Schenectady NY (US) (2 collaborations)
- Liqiao Qin of Albany NY (US) (2 collaborations)
- Jingyun Zhang of Albany NY (US) (2 collaborations)
- Leon Sigal of Monsey NY (US) (1 collaborations)
- Rishikesh Krishnan of Cohoes NY (US) (1 collaborations)
- Erin Stuckert of Albany NY (US) (1 collaborations)
- Nicolas Jean Loubet of GUILDERLAND NY (US) (1 collaborations)
- Susan Ng Emans of Albany NY (US) (1 collaborations)
- Shay Reboh of Albany NY (US) (1 collaborations)
- Reinaldo Vega of Mahopac NY (US) (1 collaborations)
- Shahrukh Khan of Sandy Hook CT (US) (1 collaborations)
- Biswanath Senapati of Mechanicville NY (US) (1 collaborations)
Subcategories
This category has the following 3 subcategories, out of 3 total.
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Pages in category "Julien Frougier of Albany NY (US)"
The following 164 pages are in this category, out of 164 total.
1
- 17453882. GATE-ALL-AROUND NANOSHEET-FET WITH VARIABLE CHANNEL GEOMETRIES FOR PERFORMANCE OPTIMIZATION simplified abstract (International Business Machines Corporation)
- 17455937. REDUCED PARASITIC RESISTANCE TWO-DIMENSIONAL MATERIAL FIELD-EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)
- 17455941. STACKED NANOSHEET DEVICES WITH MATCHED THRESHOLD VOLTAGES FOR NFET/PFET simplified abstract (International Business Machines Corporation)
- 17457448. NANOSHEET EPITAXY WITH FULL BOTTOM ISOLATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17457634. CHANNEL PROTECTION OF GATE-ALL-AROUND DEVICES FOR PERFORMANCE OPTIMIZATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17457667. HIGH-DENSITY METAL-INSULATOR-METAL CAPACITOR INTEGRATION WTH NANOSHEET STACK TECHNOLOGY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17487301. LATE REPLACEMENT BOTTOM ISOLATION FOR NANOSHEET DEVICES simplified abstract (International Business Machines Corporation)
- 17520690. SEMICONDUCTOR DEVICE WITH BOTTOM DIELECTRIC ISOLATION simplified abstract (International Business Machines Corporation)
- 17522974. GATE-CUT AND SEPARATION TECHNIQUES FOR ENABLING INDEPENDENT GATE CONTROL OF STACKED TRANSISTORS simplified abstract (International Business Machines Corporation)
- 17528391. VARACTOR INTEGRATED WITH COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR DEVICES simplified abstract (International Business Machines Corporation)
- 17528858. BOTTOM DIELECTRIC ISOLATION INTEGRATION WITH BURIED POWER RAIL simplified abstract (International Business Machines Corporation)
- 17543028. GATE-ALL-AROUND MONOLITHIC STACKED FIELD EFFECT TRANSISTORS HAVING MULTIPLE THRESHOLD VOLTAGES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17543215. COMPLEMENTARY FIELD EFFECT TRANSISTORS HAVING MULTIPLE VOLTAGE THRESHOLDS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545485. MAGNETIC TUNNEL JUNCTION PILLAR FORMATION FOR MRAM DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545501. CO-INTEGRATED LOGIC, ELECTROSTATIC DISCHARGE, AND WELL CONTACT DEVICES ON A SUBSTRATE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545610. STACKED FETS WITH NON-SHARED WORK FUNCTION METALS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17548751. CO-INTEGRATING GATE-ALL-AROUND NANOSHEET TRANSISTORS AND COMB NANOSHEET TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17548913. NANOSHEET DEVICE WITH VERTICAL BLOCKER FIN simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17550658. GATE-ALL-AROUND FIELD-EFFECT-TRANSISTOR WITH WRAP-AROUND-CHANNEL INNER SPACER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551402. FORMING NS GATES WITH IMPROVED MECHANICAL STABILITY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17643202. LINER-LESS VIA CONTACT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644100. SELECTIVE GATE CAP FOR SELF-ALIGNED CONTACTS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17806280. VIA CONNECTION TO BACKSIDE POWER DELIVERY NETWORK simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17806514. SQUARE-SHAPED CONTACT WITH IMPROVED ELECTRICAL CONDUCTIVITY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17806602. HYBRID SIGNAL AND POWER TRACK FOR STACKED TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808186. SEMICONDUCTOR DEVICE WITH POWER VIA simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808360. SINGLE STACK DUAL CHANNEL GATE-ALL-AROUND NANOSHEET WITH STRAINED PFET AND BOTTOM DIELECTRIC ISOLATION NFET simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17837150. UNIFORM SEMICONDUCTOR ACTIVE FIN WIDTH simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17849639. FORMING A FORKSHEET NANODEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17850475. CPP-AGNOSTIC SOURCE-DRAIN CONTACT FORMATION FOR GATE-ALL-AROUND DEVICES WITH DIELECTRIC ISOLATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17899111. BACKSIDE CONTACTS FOR CELL HEIGHT SCALING simplified abstract (International Business Machines Corporation)
- 17930706. GATE ALL AROUND TRANSISTORS WITH HETEROGENEOUS CHANNELS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17932347. VERTICAL NAND WITH BACKSIDE STACKING simplified abstract (International Business Machines Corporation)
- 17932557. HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS simplified abstract (International Business Machines Corporation)
- 17932677. DUAL DIELECTRIC STRESSORS simplified abstract (International Business Machines Corporation)
- 17932679. BACKSIDE CMOS TRENCH EPI WITH CLOSE N2P SPACE simplified abstract (International Business Machines Corporation)
- 17932919. SEMICONDUCTOR BACKSIDE CONTACT STRUCTURE WITH INCREASED CONTACT AREA simplified abstract (International Business Machines Corporation)
- 17936416. VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) simplified abstract (International Business Machines Corporation)
- 17936417. MONOLITHIC STACKED FIELD EFFECT TRANSISTOR (SFET) WITH DUAL MIDDLE DIELECTRIC ISOLATION (MDI) SEPARATION simplified abstract (International Business Machines Corporation)
- 17938667. MULTI-STATE FERROELECTRIC-RAM WITH STACKED CAPACITORS simplified abstract (International Business Machines Corporation)
- 17941248. CONTACT JUMPER FOR NON-SELF ALIGNED CONTACT DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17943751. HEIGHT CONTROL IN NANOSHEET DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17945418. SELF-ALIGNED BACKSIDE CONTACT IN NANOSHEET WITHOUT BDI simplified abstract (International Business Machines Corporation)
- 17948877. NANOSHEET STACKS WITH DIELECTRIC ISOLATION LAYERS simplified abstract (International Business Machines Corporation)
- 17949579. SRAM with Improved Program and Sensing Margin for Scaled Nanosheet Devices simplified abstract (International Business Machines Corporation)
- 17955974. Self-Aligned Wafer Backside Gate Signal with Airgap simplified abstract (International Business Machines Corporation)
- 17957194. HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE simplified abstract (International Business Machines Corporation)
- 17961774. HIGH DENSITY TRENCH CAPACITOR simplified abstract (International Business Machines Corporation)
- 18059093. SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18059672. THREE DIMENSIONAL RERAM DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18060003. LOCAL INTERCONNECT FORMATION AT DOUBLE DIFFUSION BREAK simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18063987. VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR WITH LATE FIN CUT simplified abstract (International Business Machines Corporation)
- 18064260. PREVENTING SOURCE/DRAIN EPI MERGE WITHOUT CELL SIZE INCREASE simplified abstract (International Business Machines Corporation)
- 18065117. EMBEDDED ReRAM WITH BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)
- 18065860. STACKED CMOS DEVICES WITH TWO DIELECTRIC MATERIALS IN A GATE CUT simplified abstract (International Business Machines Corporation)
- 18065923. TWO-TRANSISTOR CHIP AND THREE-TRANSISTOR CHIP IDENTIFICATION BIT CELLS simplified abstract (International Business Machines Corporation)
- 18066671. STRUCTURE AND METHOD TO FORM VIA TO BACKSIDE POWER RAIL WITHOUT SHORTING TO GATE TIP simplified abstract (International Business Machines Corporation)
- 18067127. LOW-RESISTANCE VIA TO BACKSIDE POWER RAIL simplified abstract (International Business Machines Corporation)
- 18067710. SELF-ALIGNED GATE METAL WITH TOP-DIELECTRIC ISOLATION simplified abstract (International Business Machines Corporation)
- 18068570. GATE TIE-DOWN FOR TOP FIELD EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)
- 18080828. TRANSISTORS WITH DIELECTRIC STACK ISOLATING BACKSIDE POWER RAIL simplified abstract (International Business Machines Corporation)
- 18080892. DIFFUSION BREAK STRUCTURE FOR TRANSISTORS simplified abstract (International Business Machines Corporation)
- 18087990. GATE-ALL-AROUND TRANSISTORS WITH CLADDED SOURCE/DRAIN REGIONS simplified abstract (International Business Machines Corporation)
- 18089655. BACKSIDE CONTACTS FOR STACKED FIELD EFFECT TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18089670. FERROELECTRIC-RAM WITH INTEGRATED DOMAIN REVERSAL CATALYST simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18097185. HYBRID SIGNAL ROUTING WITH BACKSIDE INTERCONNECT simplified abstract (International Business Machines Corporation)
- 18112020. MEMORY STRUCTURES HAVING A SINGLE ACCESS TRANSISTOR FOR MULTIPLE MEMORY DEVICES simplified abstract (International Business Machines Corporation)
- 18145034. STACKED TRANSISTORS HAVING SELF ALIGNED BACKSIDE CONTACT WITH BACKSIDE REPLACEMENT METAL GATE simplified abstract (International Business Machines Corporation)
- 18146988. FORMATION OF NON-SELF-ALIGNED BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)
- 18147129. SEAMED RESISTIVE RANDOM ACCESS MEMORY CELL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18148392. RELAXED PITCH BACKSIDE MAGNETO-RESISTIVE RANDOM ACCESS MEMORY INTEGRATION WITH SELF-ALIGNED MICRO STUD AND BACKSIDE POWER DISTRIBUTION NETWORK simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18171528. NONLINEAR CHANNEL simplified abstract (International Business Machines Corporation)
- 18183189. METHOD AND STRUCTURE OF ACCURATELY CONTROLLING CONTACT GOUGING POSITION simplified abstract (International Business Machines Corporation)
- 18186229. STACKED RESISTIVE RANDOM-ACCESS MEMORY CROSS-POINT CELL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18187738. TOP VIA INTERCONNECT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18188496. CONTACT CUT AND WRAP AROUND CONTACT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18189245. MIDDLE OF LINE CONTACT FOR ADVANCED NODES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18232640. MOON-SHAPED BOTTOM SPACER FOR VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR (VTFET) DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18296397. FORMING SOURCE/DRAIN CONTACT IN A TIGHT TIP-TO-TIP SPACE simplified abstract (International Business Machines Corporation)
- 18298402. METAL CONTACT CONNECTION THROUGH DIFFUSION BREAK AREA simplified abstract (International Business Machines Corporation)
- 18300421. SELF-ALIGNED CONTACT WITH CT CUT AFTER RMG simplified abstract (International Business Machines Corporation)
- 18334430. METAL INSULATOR METAL CAPACITOR (MIM CAPACITOR) (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18336066. TRANSISTORS WITH BOTTOM DIELECTRIC ISOLATION AND FULLY SELF-ALIGNED DIRECT BACKSIDE CONTACT (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18342090. STACKED TRANSISTORS WITH DIELECTRIC INSULATOR LAYERS (International Business Machines Corporation)
- 18342821. NANOSHEET HEIGHT CONTROL WITH DENSE OXIDE SHALLOW TRENCH ISOLATION (International Business Machines Corporation)
- 18343712. TUNNEL NANOSHEET FET FORMATION WITH INCREASED CURRENT (International Business Machines Corporation)
- 18344838. SRAM FORMATION FOR VERTICAL FET TRANSISTOR WITH BACKSIDE CONTACT (International Business Machines Corporation)
- 18452682. NANOSHEET BASED EXTENDED-GATE DEVICE INTEGRATION (International Business Machines Corporation)
- 18465247. GATE CONTACT AT GATE ENDS THROUGH BACKSIDE GATE CUT (International Business Machines Corporation)
I
- International business machines corporation (20240096699). SELF-ALIGNED BACKSIDE CONTACT IN NANOSHEET WITHOUT BDI simplified abstract
- International business machines corporation (20240096886). HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS simplified abstract
- International business machines corporation (20240096940). BACKSIDE CMOS TRENCH EPI WITH CLOSE N2P SPACE simplified abstract
- International business machines corporation (20240096946). DUAL DIELECTRIC STRESSORS simplified abstract
- International business machines corporation (20240096952). NANOSHEET STACKS WITH DIELECTRIC ISOLATION LAYERS simplified abstract
- International business machines corporation (20240096983). SEMICONDUCTOR BACKSIDE CONTACT STRUCTURE WITH INCREASED CONTACT AREA simplified abstract
- International business machines corporation (20240098961). SRAM with Improved Program and Sensing Margin for Scaled Nanosheet Devices simplified abstract
- International business machines corporation (20240099011). VERTICAL NAND WITH BACKSIDE STACKING simplified abstract
- International business machines corporation (20240105609). HIGH DENSITY BACKSIDE CAPACITOR AND INDUCTOR simplified abstract
- International business machines corporation (20240113023). Self-Aligned Wafer Backside Gate Signal with Airgap simplified abstract
- International business machines corporation (20240113117). VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) simplified abstract
- International business machines corporation (20240113162). MONOLITHIC STACKED FIELD EFFECT TRANSISTOR (SFET) WITH DUAL MIDDLE DIELECTRIC ISOLATION (MDI) SEPARATION simplified abstract
- International business machines corporation (20240113213). HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE simplified abstract
- International business machines corporation (20240120369). HIGH DENSITY TRENCH CAPACITOR simplified abstract
- International business machines corporation (20240121966). MULTI-STATE FERROELECTRIC-RAM WITH STACKED CAPACITORS simplified abstract
- International business machines corporation (20240128318). SEMICONDUCTOR STRUCTURE WITH FULLY WRAPPED-AROUND BACKSIDE CONTACT simplified abstract
- International business machines corporation (20240128331). BOTTOM ENHANCED LINER-LESS VIA CONTACT FOR REDUCED MOL RESISTANCE simplified abstract
- International business machines corporation (20240128333). DIRECT BACKSIDE SELF-ALIGNED CONTACT simplified abstract
- International business machines corporation (20240128334). SEMICONDUCTOR STRUCTURE WITH WRAPPED-AROUND BACKSIDE CONTACT simplified abstract
- International business machines corporation (20240128345). REDUCED GATE TOP CD WITH WRAP-AROUND GATE CONTACT simplified abstract
- International business machines corporation (20240128346). GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS simplified abstract
- International business machines corporation (20240130142). RESISTIVE RANDOM-ACCESS MEMORY STRUCTURES WITH STACKED TRANSISTORS simplified abstract
- International business machines corporation (20240130256). PHASE CHANGE MEMORY CELL WITH HEATER simplified abstract
- International business machines corporation (20240178136). LOCAL INTERCONNECT FORMATION AT DOUBLE DIFFUSION BREAK simplified abstract
- International business machines corporation (20240178156). SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANSISTORS simplified abstract
- International business machines corporation (20240179924). THREE DIMENSIONAL RERAM DEVICE simplified abstract
- International business machines corporation (20240186317). NANOSHEET METAL-INSULATOR-METAL CAPACITOR simplified abstract
- International business machines corporation (20240186325). STACKED TRANSISTORS HAVING BOTTOM CONTACT WITH LARGER SILICIDE simplified abstract
- International business machines corporation (20240186387). VIA AND SOURCE/DRAIN CONTACT LANDING UNDER POWER RAIL simplified abstract
- International business machines corporation (20240186391). GATE-ALL-AROUND DEVICE WITHOUT DIELECTRIC INNER SPACER simplified abstract
- International business machines corporation (20240188282). STRUCTURE WITH FRONTSIDE AND BACKSIDE DRAMS simplified abstract
- International business machines corporation (20240194677). PREVENTING SOURCE/DRAIN EPI MERGE WITHOUT CELL SIZE INCREASE simplified abstract
- International business machines corporation (20240196627). EMBEDDED ReRAM WITH BACKSIDE CONTACT simplified abstract
- International business machines corporation (20240202305). TWO-TRANSISTOR CHIP AND THREE-TRANSISTOR CHIP IDENTIFICATION BIT CELLS simplified abstract
- International business machines corporation (20240203879). LOW-RESISTANCE VIA TO BACKSIDE POWER RAIL simplified abstract
- International business machines corporation (20240203990). STACKED CMOS DEVICES WITH TWO DIELECTRIC MATERIALS IN A GATE CUT simplified abstract
- International business machines corporation (20240203992). GATE TIE-DOWN FOR TOP FIELD EFFECT TRANSISTOR simplified abstract
- International business machines corporation (20240204005). TRANSISTORS WITH DIELECTRIC STACK ISOLATING BACKSIDE POWER RAIL simplified abstract
- International business machines corporation (20240204008). STRUCTURE AND METHOD TO FORM VIA TO BACKSIDE POWER RAIL WITHOUT SHORTING TO GATE TIP simplified abstract
- International business machines corporation (20240204042). DIFFUSION BREAK STRUCTURE FOR TRANSISTORS simplified abstract
- International business machines corporation (20240204079). SELF-ALIGNED GATE METAL WITH TOP-DIELECTRIC ISOLATION simplified abstract
- International business machines corporation (20240213248). STACKED TRANSISTORS HAVING SELF ALIGNED BACKSIDE CONTACT WITH BACKSIDE REPLACEMENT METAL GATE simplified abstract
- International business machines corporation (20240213315). GATE-ALL-AROUND TRANSISTORS WITH CLADDED SOURCE/DRAIN REGIONS simplified abstract
- International business machines corporation (20240213338). FORMATION OF NON-SELF-ALIGNED BACKSIDE CONTACT simplified abstract
- International business machines corporation (20240222227). BACKSIDE CONTACTS FOR STACKED FIELD EFFECT TRANSISTORS simplified abstract
- International business machines corporation (20240224539). FERROELECTRIC-RAM WITH INTEGRATED DOMAIN REVERSAL CATALYST simplified abstract
- International business machines corporation (20240224812). RELAXED PITCH BACKSIDE MAGNETO-RESISTIVE RANDOM ACCESS MEMORY INTEGRATION WITH SELF-ALIGNED MICRO STUD AND BACKSIDE POWER DISTRIBUTION NETWORK simplified abstract
- International business machines corporation (20240224819). SEAMED RESISTIVE RANDOM ACCESS MEMORY CELL simplified abstract
- International business machines corporation (20240242012). HYBRID SIGNAL ROUTING WITH BACKSIDE INTERCONNECT simplified abstract
- International business machines corporation (20240282860). NONLINEAR CHANNEL simplified abstract
- International business machines corporation (20240284687). MEMORY STRUCTURES HAVING A SINGLE ACCESS TRANSISTOR FOR MULTIPLE MEMORY DEVICES simplified abstract
- International business machines corporation (20240313070). METHOD AND STRUCTURE OF ACCURATELY CONTROLLING CONTACT GOUGING POSITION simplified abstract
- International business machines corporation (20240321630). TOP VIA INTERCONNECT simplified abstract
- International business machines corporation (20240321645). CONTACT CUT AND WRAP AROUND CONTACT simplified abstract
- International business machines corporation (20240321982). MIDDLE OF LINE CONTACT FOR ADVANCED NODES simplified abstract
- International business machines corporation (20240324476). STACKED RESISTIVE RANDOM-ACCESS MEMORY CROSS-POINT CELL simplified abstract
- International business machines corporation (20240332082). STACKED ELECTRONIC DEVICES HAVING INDEPENDENT GATES simplified abstract
- International business machines corporation (20240332296). FORKSHEET DEVICE WITH ACCURATE GATE EXTENSION FOR REDUCED PARASITIC CAPACITANCE simplified abstract
- International business machines corporation (20240339509). FORMING SOURCE/DRAIN CONTACT IN A TIGHT TIP-TO-TIP SPACE simplified abstract
- International business machines corporation (20240339523). VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR WITH LATE FIN CUT simplified abstract
- International business machines corporation (20240347423). METAL CONTACT CONNECTION THROUGH DIFFUSION BREAK AREA simplified abstract
- International business machines corporation (20240347533). SELF-ALIGNED CONTACT WITH CT CUT AFTER RMG simplified abstract
- International business machines corporation (20240413214). SELF ALIGNED BACKSIDE CONTACT
- International business machines corporation (20240415032). PHASE CHANGE MEMORY CELL
- International business machines corporation (20240421035). TRANSISTORS WITH BOTTOM DIELECTRIC ISOLATION AND FULLY SELF-ALIGNED DIRECT BACKSIDE CONTACT
- International business machines corporation (20240421064). METAL INSULATOR METAL CAPACITOR (MIM CAPACITOR)
- International business machines corporation (20240429096). GATE CUT OF SELF-ALIGNED CONTACT POST REPLACEMENT METAL GATE
- International business machines corporation (20240429280). INTEGRATED TRANSISTOR HAVING AN OVER-THE-CHANNEL ETCH-STOP ISOLATION REGION
- International business machines corporation (20250072116). NANOSHEET BASED EXTENDED-GATE DEVICE INTEGRATION
- International business machines corporation (20250089288). GATE CONTACT AT GATE ENDS THROUGH BACKSIDE GATE CUT
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Categories:
- Ruilong Xie of Niskayuna NY (US)
- Min Gyu Sung of Latham NY (US)
- Juntao Li of Cohoes NY (US)
- Chanro Park of Clifton Park NY (US)
- Tao Li of Slingerlands NY (US)
- Shay Reboh of Guilderland NY (US)
- Tenko Yamashita of Schenectady NY (US)
- Liqiao Qin of Albany NY (US)
- Jingyun Zhang of Albany NY (US)
- Leon Sigal of Monsey NY (US)
- Rishikesh Krishnan of Cohoes NY (US)
- Erin Stuckert of Albany NY (US)
- Nicolas Jean Loubet of GUILDERLAND NY (US)
- Susan Ng Emans of Albany NY (US)
- Shay Reboh of Albany NY (US)
- Reinaldo Vega of Mahopac NY (US)
- Shahrukh Khan of Sandy Hook CT (US)
- Biswanath Senapati of Mechanicville NY (US)
- Julien Frougier of Albany NY (US)
- Inventors
- Inventors filing patents with INTERNATIONAL BUSINESS MACHINES CORPORATION
- Inventors filing patents with International Business Machines Corporation