Category:Jingyun Zhang of Albany NY (US)
Jingyun Zhang
Jingyun Zhang from Albany NY (US) has applied for patents in technology areas such as H01L29/66, H01L21/8234, H01L27/088 with international business machines corporation.
Patents
Subcategories
This category has the following 3 subcategories, out of 3 total.
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Pages in category "Jingyun Zhang of Albany NY (US)"
The following 14 pages are in this category, out of 14 total.
1
- 17527355. MULTI-VT NANOSHEET DEVICES simplified abstract (International Business Machines Corporation)
- 17544328. WRAPAROUND CONTACT WITH REDUCED DISTANCE TO CHANNEL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545501. CO-INTEGRATED LOGIC, ELECTROSTATIC DISCHARGE, AND WELL CONTACT DEVICES ON A SUBSTRATE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17550724. SEMICONDUCTOR STRUCTURES WITH WRAP-AROUND CONTACT STRUCTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17643553. MULTILAYER WORK FUNCTION METAL IN NANOSHEET STACKS USING A SACRIFICIAL OXIDE MATERIAL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17936417. MONOLITHIC STACKED FIELD EFFECT TRANSISTOR (SFET) WITH DUAL MIDDLE DIELECTRIC ISOLATION (MDI) SEPARATION simplified abstract (International Business Machines Corporation)
- 18071974. SEMICONDUCTOR TRANSISTOR STRUCTURE HAVING AN EPITAXIAL OXIDE SPACER LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18466215. TAPERED INNER SPACER (International Business Machines Corporation)
- 18508367. GATE INDUCED DRAIN LEAKAGE REDUCTION IN FINFETS simplified abstract (International Business Machines Corporation)
I
- International business machines corporation (20240097006). GATE INDUCED DRAIN LEAKAGE REDUCTION IN FINFETS simplified abstract
- International business machines corporation (20240113162). MONOLITHIC STACKED FIELD EFFECT TRANSISTOR (SFET) WITH DUAL MIDDLE DIELECTRIC ISOLATION (MDI) SEPARATION simplified abstract
- International business machines corporation (20240178284). SEMICONDUCTOR TRANSISTOR STRUCTURE HAVING AN EPITAXIAL OXIDE SPACER LAYER simplified abstract
- International business machines corporation (20240429277). MULTIPLE GATE DIELECTRICS FOR MONOLITHIC STACKED DEVICES
- International business machines corporation (20250089329). TAPERED INNER SPACER