International business machines corporation (20240186317). NANOSHEET METAL-INSULATOR-METAL CAPACITOR simplified abstract

NANOSHEET METAL-INSULATOR-METAL CAPACITOR

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Julien Frougier of Albany NY (US)

Alexander Reznicek of Troy NY (US)

Sagarika Mukesh of Albany NY (US)

NANOSHEET METAL-INSULATOR-METAL CAPACITOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240186317 titled 'NANOSHEET METAL-INSULATOR-METAL CAPACITOR

Simplified Explanation

The semiconductor device described in the abstract consists of two nanosheet devices, each with different components such as active semiconductor layers, metal stacks, gate insulator layers, and metal contacts.

• The first nanosheet device includes active semiconductor layers, a metal stack, and a gate insulator layer.
• The second nanosheet device includes a metal contact, a metal stack, and a gate insulator layer.

• • Potential Applications:**

This technology could be applied in advanced electronic devices, such as high-performance transistors, memory devices, and sensors.

• • Problems Solved:**

This technology helps in improving the performance and efficiency of semiconductor devices by utilizing nanosheet structures and advanced materials.

• • Benefits:**

The benefits of this technology include enhanced device performance, increased energy efficiency, and potential for smaller device sizes.

• • Potential Commercial Applications:**

"Advanced Semiconductor Devices for Next-Generation Electronics"

• • Possible Prior Art:**

One possible prior art could be the use of nanosheet structures in semiconductor devices to improve performance and efficiency.

• • Unanswered Questions:**

1. How does the integration of multiple nanosheet devices impact overall device performance? 2. What are the potential challenges in scaling up production of semiconductor devices with nanosheet structures?

Original Abstract Submitted

a semiconductor device is provided. the semiconductor device includes: a first nanosheet device including a plurality of active semiconductor layers, a first metal stack wrapping around the active semiconductor layers, and a first gate insulator layer between the active semiconductor layers and the first metal stack; and a second nanosheet device including a second metal contact, the first metal stack wrapping around the second metal contact, and a second gate insulator between the second metal contact and the first metal stack.