International business machines corporation (20250072116). NANOSHEET BASED EXTENDED-GATE DEVICE INTEGRATION
NANOSHEET BASED EXTENDED-GATE DEVICE INTEGRATION
Organization Name
international business machines corporation
Inventor(s)
Ruilong Xie of Niskayuna NY (US)
Julien Frougier of Albany NY (US)
Min Gyu Sung of Latham NY (US)
Chanro Park of Clifton Park NY (US)
NANOSHEET BASED EXTENDED-GATE DEVICE INTEGRATION
This abstract first appeared for US patent application 20250072116 titled 'NANOSHEET BASED EXTENDED-GATE DEVICE INTEGRATION
Original Abstract Submitted
a semiconductor device comprises a first nanosheet transistor disposed on a semiconductor substrate, the first nanosheet transistor comprising a plurality of first gate structures, and a second nanosheet transistor disposed on the semiconductor substrate, the second nanosheet transistor comprising a plurality of second gate structures. respective stacked spacer structures are disposed on respective sides of respective ones of the plurality of second gate structures, wherein each of the respective stacked spacer structures comprises a first spacer and a second spacer. respective ones of the plurality of first gate structures comprise a first nanosheet gate portion and a gate dielectric layer around the first nanosheet gate portion. the respective ones of the plurality of second gate structures comprise a second nanosheet gate portion and at least two gate dielectric layers around the second nanosheet gate portion.