Changxin Memory Technologies, Inc. patent applications published on December 28th, 2023

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Summary of the patent applications from Changxin Memory Technologies, Inc. on December 28th, 2023

Changxin Memory Technologies, Inc. has recently filed several patents related to semiconductor structures, fabrication methods, and memory devices. These patents aim to improve the performance, reliability, and efficiency of various electronic devices, including integrated circuits, memory devices, and programmable logic devices.

Summary of Recent Patents:

- Patent 1: Describes an anti-fuse structure, array, and method for forming the same. The structure includes a substrate, a switching device, and an anti-fuse device. The patent focuses on providing a reliable and efficient anti-fuse device, controlled switching between different states, and precise placement and configuration of the components.

- Patent 2: Describes a semiconductor structure and method for manufacturing it, as well as a memory and method for operating it. The structure includes active areas, gate structures, and anti-fuse bit structures. The patent addresses challenges in data storage and integration, providing improved reliability, enhanced integration, and a simplified manufacturing process.

- Patent 3: Describes a semiconductor structure consisting of word lines, semiconductor channels, stepped structures, and contact structures. The structure is designed to improve the performance and efficiency of electronic devices by providing a more compact and organized structure.

- Patent 4: Describes a method for forming a semiconductor structure with optimized gate channel width and active pillar design. The patent addresses the challenge of optimizing gate channel width and provides a solution for improving device performance and efficiency.

- Patent 5: Describes a semiconductor structure with double heterostructures and double gate structures. The patent focuses on improved control over electronic properties, enhanced performance and efficiency, and better integration of double gate structures.

- Patent 6: Describes a method for preparing a semiconductor structure with multiple channel areas and source-drain areas. The method simplifies the manufacturing process, improves efficiency, and enables the creation of more compact and high-performance electronic devices.

Notable Applications:

- Memory devices: The described semiconductor structures and fabrication methods can be used in various memory devices, such as non-volatile memories or programmable logic devices.

- Integrated circuits: The structures and methods can be applied in the manufacturing of integrated circuits, enabling the creation of more efficient and reliable circuits.

- Optoelectronic devices: The semiconductor structures and methods can be applied in the manufacturing of optoelectronic devices, enhancing their performance and efficiency.

- Solar cells: The semiconductor structures and methods can be used in the manufacturing of solar cells, improving their energy conversion efficiency.



Contents

Patent applications for Changxin Memory Technologies, Inc. on December 28th, 2023

METHOD FOR DETERMINING PERFORMANCE OF SEQUENTIAL LOGIC ELEMENTS AND DEVICE (18094100)

Main Inventor

Zengquan WU


RANDOM DATA GENERATION CIRCUIT AND READ/WRITE TRAINING CIRCUIT (18093728)

Main Inventor

Biao CHENG


MEMORY DEVICE AND ZQ CALIBRATION METHOD (18364490)

Main Inventor

Kai TIAN


MEMORY DEVICE AND ZQ CALIBRATION METHOD (18364026)

Main Inventor

Kai TIAN


MEMORY DEVICE AND ZQ CALIBRATION METHOD (18448902)

Main Inventor

Kai TIAN


DATA RECEIVING CIRCUIT, DATA RECEIVING SYSTEM AND MEMORY DEVICE (18154794)

Main Inventor

Feng LIN


DATA RECEIVING CIRCUIT, DATA RECEIVING SYSTEM, AND MEMORY DEVICE (18152919)

Main Inventor

Feng LIN


REFRESH CONTROL CIRCUIT AND METHOD, AND MEMORY (17935746)

Main Inventor

Jixing CHEN


IN-MEMORY COMPUTING CIRCUIT AND METHOD, AND SEMICONDUCTOR MEMORY (18166435)

Main Inventor

HENG-CHIA CHANG


METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE (17935161)

Main Inventor

Zhaopei CUI


PACKAGE STRUCTURE AND METHOD FOR MANUFACTURING PACKAGE STRUCTURE (18166473)

Main Inventor

Huifang DAI


ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE AND CHIP (18095667)

Main Inventor

Bin SONG


DATA RECEIVING CIRCUIT, DATA RECEIVING SYSTEM AND STORAGE APPARATUS (17901912)

Main Inventor

FENG LIN


LAYOUT STRUCTURE AND METHOD FOR FABRICATING SAME (18155759)

Main Inventor

Yingdong GUO


METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE AND THREE-DIMENSIONAL STRUCTURE (17897271)

Main Inventor

Xiaojie LI


SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF (17899622)

Main Inventor

Guangsu SHAO


SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF (17901853)

Main Inventor

Deyuan XIAO


TRANSISTOR, FABRICATION METHOD, AND MEMORY (17934647)

Main Inventor

Deyuan XIAO


METHOD FOR PREPARING SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR MEMORY (18155114)

Main Inventor

Yi TANG


SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME (18156322)

Main Inventor

YOUMING LIU


MEMORY AND FORMING METHOD THEREOF (17817143)

Main Inventor

Yi TANG


SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR (18093930)

Main Inventor

Meng HUANG


SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR SAME (17954316)

Main Inventor

Kang YOU


SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME (18149671)

Main Inventor

Dong YAN


SEMICONDUCTOR STRUCTURE (18150245)

Main Inventor

Jianfeng XIAO


SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME, MEMORY AND OPERATION METHOD THEREOF (17899145)

Main Inventor

Yanzhe TANG


ANTI-FUSE STRUCTURE, ANTI-FUSE ARRAY AND METHOD FOR MANUFACTURING SAME (18165011)

Main Inventor

Chuangming HOU