17935161. METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE simplified abstract (Changxin Memory Technologies, Inc.)
Contents
METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE
Organization Name
Changxin Memory Technologies, Inc.
Inventor(s)
Zhaopei Cui of Hefei City (CN)
METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17935161 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE
Simplified Explanation
The patent application describes a method of manufacturing a semiconductor structure and the resulting structure itself. Here is a simplified explanation of the abstract:
- The method starts by providing a substrate.
- A multilayer film stack is then formed on the substrate.
- A supporter is formed at the top of the multilayer film stack.
- The multilayer film stack is etched to create multiple gate structures arranged at intervals along a first direction.
- The supporter extends through the top of each gate structure and continues along the first direction.
Potential Applications:
- This method can be used in the manufacturing of various semiconductor devices, such as transistors or integrated circuits.
- It can be applied in the production of advanced electronic devices, including smartphones, computers, and other consumer electronics.
Problems Solved:
- The method provides a way to create gate structures with precise arrangement and intervals, which is crucial for the proper functioning of semiconductor devices.
- The supporter helps in maintaining the structural integrity of the gate structures during the etching process.
Benefits:
- The method allows for the efficient manufacturing of semiconductor structures with accurate gate structure arrangement.
- The resulting semiconductor structure has improved stability and reliability due to the presence of the supporter.
- This innovation can contribute to the development of more advanced and high-performance electronic devices.
Original Abstract Submitted
A method of manufacturing a semiconductor structure and a semiconductor structure are disclosed. The method of manufacturing a semiconductor structure includes: providing a substrate; forming a multilayer film stack on the substrate; forming a supporter at a top of the multilayer film stack; and etching the multilayer film stack to form a plurality of gate structures arranged at intervals along a first direction, where the supporter penetrates a top of each of the plurality of gate structures and extends along the first direction.
