18095667. ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE AND CHIP simplified abstract (Changxin Memory Technologies, Inc.)

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ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE AND CHIP

Organization Name

Changxin Memory Technologies, Inc.

Inventor(s)

Bin Song of Hefei City (CN)

Qian Xu of Hefei City (CN)

Tieh-chiang Wu of Hefei City (CN)

ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE AND CHIP - A simplified explanation of the abstract

This abstract first appeared for US patent application 18095667 titled 'ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE AND CHIP

Simplified Explanation

The abstract describes an electrostatic discharge protection structure and a chip. The structure includes various doped portions located in different wells within a semiconductor substrate. The N-type well and P-type well are located in the substrate, while the N-type and P-type doped portions are located in their respective wells. The first N-type doped portion has a "T" shape structure, the first P-type doped portion has a "U" shape structure, and a part of the first N-type doped portion is located in a "U" shape opening of the first P-type doped portion.

  • The electrostatic discharge protection structure includes a semiconductor substrate, N-type and P-type wells, and various doped portions.
  • The N-type and P-type wells are located in the semiconductor substrate.
  • The doped portions are located in their respective wells.
  • The first N-type doped portion has a "T" shape structure.
  • The first P-type doped portion has a "U" shape structure.
  • A part of the first N-type doped portion is located in a "U" shape opening of the first P-type doped portion.

Potential Applications

  • Integrated circuits and chips requiring electrostatic discharge protection.
  • Electronic devices susceptible to electrostatic discharge damage.

Problems Solved

  • Protection against electrostatic discharge events that can damage electronic components.
  • Ensuring the reliability and longevity of integrated circuits and chips.

Benefits

  • Enhanced electrostatic discharge protection for sensitive electronic components.
  • Improved reliability and durability of integrated circuits and chips.
  • Cost-effective solution for electrostatic discharge protection.


Original Abstract Submitted

An electrostatic discharge protection structure and a chip are provided. The electrostatic discharge protection structure includes: a semiconductor substrate, an N-type well, a P-type well, a first N-type doped portion, a first P-type doped portion, a second P-type doped portion and a second N-type doped portion. The N-type well and the P-type well are located in the semiconductor substrate. The first N-type doped portion and the second P-type doped portion are located in the P-type well, and the first P-type doped portion and the second N-type doped portion are located in the N-well. The first N-type doped portion has a “T” shape structure, the first P-type doped portion has a “U” shape structure, and a part of the first N-type doped portion is located in a “U” shape opening of the first P-type doped portion.

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