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Category:Jiann-Tyng Tzeng of Hsinchu (TW)
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Pages in category "Jiann-Tyng Tzeng of Hsinchu (TW)"
The following 13 pages are in this category, out of 13 total.
1
- 17819482. POWER VIAS FOR BACKSIDE POWER DISTRIBUTION NETWORK simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886145. SEMICONDUCTOR DEVICE HAVING MIXED CMOS ARCHITECTURE AND METHOD OF MANUFACTURING SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18156752. MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18362842. PIN ACCESS HYBRID CELL HEIGHT DESIGN AND SYSTEM simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18448101. INTEGRATED CIRCUIT, SYSTEM AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18448136. INTEGRATED CIRCUIT HAVING HYBRID SHEET STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18526445. SEMICONDUCTOR DEVICES WITH BACKSIDE ROUTING AND METHOD OF FORMING SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
T
- Taiwan semiconductor manufacturing co., ltd. (20240096805). SEMICONDUCTOR DEVICES WITH BACKSIDE ROUTING AND METHOD OF FORMING SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240104288). INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105601). DEEP LINES AND SHALLOW LINES IN SIGNAL CONDUCTING PATHS simplified abstract
U
- US Patent Application 18232713. Semiconductor Devices With Backside Power Distribution Network And Frontside Through Silicon Via simplified abstract
- US Patent Application 18358321. Buried Metal for FinFET Device and Method simplified abstract
- US Patent Application 18362889. IC DEVICE LAYOUT METHOD simplified abstract