18448136. INTEGRATED CIRCUIT HAVING HYBRID SHEET STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
INTEGRATED CIRCUIT HAVING HYBRID SHEET STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Shang-Wei Fang of Hsinchu (TW)
Jiann-Tyng Tzeng of Hsinchu (TW)
Chung-Hsing Wang of Hsinchu (TW)
INTEGRATED CIRCUIT HAVING HYBRID SHEET STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18448136 titled 'INTEGRATED CIRCUIT HAVING HYBRID SHEET STRUCTURE
Simplified Explanation
The abstract describes an integrated circuit (IC) that includes nano-sheet structures and via structures for electrical connections. The IC has four nano-sheet structures with different widths and four via structures connected to them. The second width and the width of the second via structure are both greater than the third width and the width of the third via structure. The second and third nano-sheet structures are positioned between the first and fourth nano-sheet structures. The second and third via structures connect the second and third nano-sheet structures to a first portion of a back-side power distribution structure, while the first and fourth via structures connect the first and fourth nano-sheet structures to a second portion of the back-side power distribution structure.
- The integrated circuit (IC) includes nano-sheet structures and via structures for electrical connections.
- There are four nano-sheet structures with different widths and four via structures connected to them.
- The second width and the width of the second via structure are both greater than the third width and the width of the third via structure.
- The second and third nano-sheet structures are positioned between the first and fourth nano-sheet structures.
- The second and third via structures connect the second and third nano-sheet structures to a first portion of a back-side power distribution structure.
- The first and fourth via structures connect the first and fourth nano-sheet structures to a second portion of the back-side power distribution structure.
Potential Applications
This technology can be applied in various fields where integrated circuits are used, such as:
- Electronics manufacturing
- Telecommunications
- Computing devices
- Automotive industry
Problems Solved
The technology solves several problems in integrated circuit design and manufacturing, including:
- Efficient power distribution within the circuit
- Ensuring proper electrical connections between nano-sheet structures
- Optimizing circuit performance and reliability
Benefits
The benefits of this technology include:
- Improved power distribution efficiency
- Enhanced circuit performance and reliability
- Simplified design and manufacturing processes
- Potential for smaller and more compact integrated circuits.
Original Abstract Submitted
An integrated circuit (IC) includes first through fourth nano-sheet structures extending in a first direction and having respective first through fourth widths along a second direction perpendicular to the first direction, and first through fourth via structures electrically connected to corresponding ones of the first through fourth nano-sheet structures. The second width has a value greater than that of the third width. A width of the second via structure along the second direction has a value greater than that of a width of the third via structure along the second direction. The second and third nano-sheet structures are positioned between the first and fourth nano-sheet structures. The second and third via structures are configured to electrically connect the second and third nano-sheet structures to a first portion of a back-side power distribution structure configured to carry one of a power supply voltage or a reference voltage. The first and fourth via structures are configured to electrically connect the first and fourth nano-sheet structures to a second portion of the back-side power distribution structure configured to carry the other of the power supply voltage or the reference voltage.
